Epitaxy gallium nitride

Figure 3.26 Molecular beam epitaxy (a) simplified presentation of monatomic layers of gallium and nitrogen deposited sequentially to form a gallium nitride film (b) molecular beam epitaxy system designed and built at Pacific Northwest National Laboratory, Richland, WA. (Reproduced with permission.)...

Porous Silicon Carbide and Gallium Nitride Epitaxy, Catalysis, and Biotechnology Applications Edited by Randall M. Feenstra and Colin E.C. Wood 2008 John Wiley Sons, Ltd... 

Pauporte, T., Cortes, R., Froment, M., Beaumont, B., and Lincot, D. (2002) Electrocrystallization of epitaxial zinc oxide onto gallium nitride. Chem. Mater., 14, 4702 708. 

M Rubin, N Newman, JS Chan, TC Fu, JT Ross.p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion or coevaporation of Mg. Appl Phys Lett 64 64, 1994. 

Substrates for gallium nitride epitaxy. Materials Science ei En neering R-Reports, 37, 61. 

Chemical Vapor Deposition. Chemical vapor deposition (CVD) is a process where by the heat-induced decomposition of gases form different semiconductor layers such as silicon dioxide, silicon nitride, polysilicon, and gallium arsenide on the surface of the wafer. When the layer formed is a continuation of the crystalline structure of the substrate, the process used is epitaxial growth. Other, non-epitaxial forms of CVD involve the deposition of layers that are a different structure than the substrate. Table 5 outlines typical chemistries associated with CVD. 

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