Epitaxial deposition hydride vapor-phase epitaxy

MOCVD (metal-organic chemical vapor deposition), OMVPE (organometallic vapor-phase epitaxy), and HVPE (hydride vapor-phase epitaxy) have some... 

Hattori A. N., Endo K., Hattori K. Daimon H. (2009) GaN(OOOl) surfaces on commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultra high vacuum Applied Surface Science, Vol. 256, pp 4745-4756. 

Although first deposition experiments of nonpolar GaN films on r-plane sapphire were performed as early as in 1987 [5], the defect structure in wurtzite GaN and related compounds has been mainly studied in the past focusing on films oriented along the hexagonal [0001] axis (c-axis). Growth techniques such as molecular beam epitaxy (MBE) [1], metal organic vapor phase epitaxy (MOVPE) [6], and hydride vapor phase epitaxy (HVPE) [7,8] are established for polar as well as nonpolar GaN growth. The structural quality of a-plane GaN... 

A method that overcomes some of these limitations is metal-organic chemical vapor deposition (MOCVD), sometimes called organometallic vapor phase epitaxy (OMVPE) °. An organometallic compound such as a group IIB alkyl reacts with a chalcogenide hydride on a substrate that is at the highest temperature in the chamber ... 

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