Epitaxy magnetism

Thin-film XRD is important in many technological applications, because of its abilities to accurately determine strains and to uniquely identify the presence and composition of phases. In semiconduaor and optical materials applications, XRD is used to measure the strain state, orientation, and defects in epitaxial thin films, which affect the film s electronic and optical properties. For magnetic thin films, it is used to identify phases and to determine preferred orientations, since these can determine magnetic properties. In metallurgical applications, it is used to determine strains in surfiice layers and thin films, which influence their mechanical properties. For packaging materials, XRD can be used to investigate diffusion and phase formation at interfaces... 

The study of ultra-thin Fe thin films on Cu(OOl) substrate has attracted a lot of interest in the past. This is due to the abundance of interesting phenomena associated with this system. Due to the small epitaxial misfit a good layer by layer growth is expected stabilizing the film in a structure related to the fee phase of bulk Fe which is otherwise unstable at low temperatures It also become a test system for magnetic measurements. 

The problem of surface magnetism and of the magnetic properties of thin metal films supported, or epitaxially grown onto single crystal substrates is also developing with an open interest for the possible exploitation of magnetic supports for information... 

Shift Registers with Submicron Magnetic Bubbles on Epitaxial Garnet Films. Presented at Intermag, Washington, D.C. See also Abstr. 26.5 in Abstr. Dig, for the same conference, 1973. 

By means of magnetic measurements, Selwood (82) observed that the concentration of electron holes (here identical with Ni + ions) in NiO films can be increased, if these NiO films are prepared on y-alumina supports. Obviously the chemisorption or the incorporation of oxygen into the lattice of NiO is favored by the effect of the epitaxy (oriented growth) of NiO on 7-AI2O3. 

Preparation of Ill-V magnetic semiconductors by molecular beam epitaxy. 6... 

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