Phase Epitaxy LPE

The composition must be controlled to give the required emission wavelength. Techniques utilized include molecular-beam epitaxy (MBE) and liquid-phase epitaxy (LPE). 

Fig. 4. Energy below the conduction band of levels reported in the literature for GaP. States are arranged from top to bottom chronologically, then by author. At the left is an indication of the method of sample growth or preparation liquid phase epitaxy (LPE), liquid encapsulated Czochralski (LEC), irradiated with 1-MeV electrons (1-MeV e), and vapor phase epitaxy (VPE). Next to this the experimental method is listed photoluminescence (PL), photoluminescence decay time (PLD), junction photocurrent (PCUR), photocapacitance (PCAP), transient capacitance (TCAP), thermally stimulated current (TSC), transient junction dark current (TC), deep level transient spectroscopy (DLTS), photoconductivity (PC), and optical absorption (OA).

Fig. 3.38 Carrier concentration p versus pressure of As gas P for the crystals obtained by reheating undoped n-GaAs, which was prepared by the method of liquid phase epitaxy (LPE) at 850 °C. ...

A similar experiment was performed on the crystals grown by the method of liquid phase epitaxy (LPE) as the starting crystal. The starting crystals were reheated under various pressures of As gas at 850 °C for 30 min. Figure 3.38 shows the hole concentration, p, dependence on Pas at the surface of the heat-treated crystals. (The starting crystals showed n-type conduction, and after heat-treatment under this condition, only 7 pm of the surface of... 

Epitaxial Layers. Epitaxial deposition produces a single crystal layer on a substrate for device fabrication or a layer for multilevel conductive interconnects which may be of much higher quality than the substrate. The epitaxial layer may have a different dopant concentration as a result of introducing the dopant during the epitaxial growth process or may have a different composition than the substrate as in silicon on sapphire. Methods used for epitaxial growth include chemical vapor deposition (CVD), vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE) and solid phase epitaxy (SPE). 

Methods of manufacturing mercury cadmium telluride material have evolved from bulk melt growth to liquid phase epitaxy (LPE) technology, vapor phase epitaxy (VPE) and metal-organic chemical vapor deposition (MOCVD) [5-7], These new methods have made it possible to manufacture large two-dimensional focal plane arrays [8-11],... 

Crystal Growth from Melts and Solutions 17.2.4.2. Growth from High-Melting Solutions 17.2.4.2.7. Liquid Phase Epitaxy (LPE). 

Liquid phase epitaxy (LPE) has been used for many years for the growth of semiconductors multilayers, especially for optoelectronic applications with III-V based materials (GaAs, AlAs, InP, and related compounds) [1], Efficient solar cells were also fabricated, especially for use under high-concentration from GaAs [2] and have reached up to 18% for Si. 

For silicon, the process can be used to grow films with thicknesses of 1 jtimto >100 nm. Some processes require high substrate temperature, whereas others do not require significant heating of the substrate. For photovoltaic applications, epitaxial silicon is usually grown using liquid-phase epitaxy (LPE) [1-3] and vapor-phase epitaxy (VPE) [4-6], which is a modification of chemical vapor deposition (CVD). 

F. Kawamura, T. Iwahashi, K. Omae, M. Morishita, M. Yoshimura, Y. Mori and T. Sasaki, Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique , Jpn J. Appl. Pbys., 42, L4-L6 Part 2 (2003). 

Many TEM studies show that the GB films grown by physical vapor deposition (PVD) on bicrystal substrates are wavy and the typical facet size is about 50 nm [4.35-4.37]. Therefore, the dependence of critical current density on misorientation angle is difficult to study with these films. Recently, liquid-phase epitaxy (LPE) was successfully used to obtain large single-facet grain boundaries. Fig. 4.20 shows a plan-view image of the GB of a YBCO film grown on a 24° MgO bicrystal. It clearly shows that the GB is a symmetrical... 

As mentioned above, CVD, the most general term describing the deposition process, implies nothing about the crystallinity of the grown layer. Epitaxy is directed at single crystal layers on single crystal substrates. Vapor phase epitaxy (VPE) was coined to parallel liquid phase epitaxy (LPE). 

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