Silicon carbide epitaxial growth

Danielsson, O. Henry, A. and Janzen, E. Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers J. Cryst. Growth 243 (2002) 170-184. 

N.S. Savkina, V.V. Ratnikov, V.B. Schuman, The effect of high-temperature epitaxial SiC layer growth on the structure of porous silicon carbide, Semiconductors, 35, 153-157 (2001). 

Sublimation is one of the main methods of growing silicon carbide. This method is employed for growth of the material for abrasive applications as well as for the growth of single crystals and epitaxial layers for use in semiconductor electronics. The idea of the method is fairly simple, and is based on material transport from a hot source of material to a substrate which rests at a somewhat lower temperature. The transport is performed by the intrinsic vapour of the material at a high temperature, usually in the range 1600-2700 °C. 

H Matsunami, T Ueda, H Nishino. Step-controlled epitaxial growth of SiC. In Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors. JT Glass R Messier, N Fujimori, eds. Pittsburgh Materials Research Society, 1990, p 397. 

S Nishino, J Saraie. Epitaxial growth of 3C-SiC on a Si substrate using methyltrichlorosilane. In GL Harris, CY-W Yang, eds. Amorphous and Crystalline Silicon Carbide. Berhn Springer-Verlag, 1989, p 45. 

---