Nitrides epitaxy

The main issue involving GaN substrates for nitride epitaxy concerns obtaining optoelectronic devices without mismatch dislocations. The critical conditions for misfit-dislocation creation include lattice mismatch between the layer and the substrate, layer thickness, growth conditions and substrate quality. 

Porous Silicon Carbide and Gallium Nitride Epitaxy, Catalysis, and Biotechnology Applications Edited by Randall M. Feenstra and Colin E.C. Wood 2008 John Wiley Sons, Ltd... 

H. Aida, S.-W. Kim, K. Sunakawa, N. Aota, K. Koyama, M. Takeuchi, T. Suzuki, Ill-Nitride epitaxy on atomicahy controUed surface of sapphire substrate with slight misorientation, Jpn. J. Appl. Phys. 51 (2012) 025502. 

Substrates for gallium nitride epitaxy. Materials Science ei En neering R-Reports, 37, 61. 

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