Lateral Epitaxy and Microstructure in Selectively Grown GaN on SiC Substrates

Selective growth of LEO-GaN was performed at 1000 - 1100°C and 45 torr [20,21], Triethylgallium (TEG) (flow rate = 13.3 - 39.9 pmol/min), NH3 (1500 seem), and H2 (3000 seem), were used as reactant and diluent gases, respectively. The NH3/TEG ratio was varied from 960 to 2600. Incorporation of the n-type Si dopant into the GaN pyramids was achieved using SiFL at a flow rate of 5.5 nmol/min. 

Cl Microstructure and Lateral Epitaxy of Selectively Grown GaN Hexagonal Pyramids 

FIGURE 1 (a) Microstructure of a hexagonal GaN pyramid array, as revealed by low magnification TEM. 

The selective area diffraction pattern shown in the inset reveals the monociystalline nature of the pyramids. 

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B2.10 Lateral epitaxy and microstructure in selectively grown GaN on SiC substrates... 

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