Epitaxy, vapor phase

Stringfellow G B 1989 Organometallic Vapor-Phase Epitaxy (San Diego, CA Academic)... 

LPE = liquid-phase epitaxy, MOCVD = metalorganic chemical vapor deposition, VPE = vapor-phase epitaxy. 

Metalorganic Vapor Phase Epitaxy 1992," ia the Proceedings of the Sixth International Conference on Metalorganic Papor Phase Epitayy, Cambridge, Mass., June 1992 8—11, G. B. StriugfeUow and. J. Coleman, eds.,/ CystalGrowth, 124(1—4) (Nov. 1992). 

Electrical Properties. Generally, deposited thin films have an electrical resistivity that is higher than that of the bulk material. This is often the result of the lower density and high surface-to-volume ratio in the film. In semiconductor films, the electron mobiHty and lifetime can be affected by the point defect concentration, which also affects electromigration. These effects are eliminated by depositing the film at low rates, high temperatures, and under very controUed conditions, such as are found in molecular beam epitaxy and vapor-phase epitaxy. 

Tertiary arsines have been widely employed as ligands in a variety of transition metal complexes (74), and they appear to be useful in synthetic organic chemistry, eg, for the olefination of aldehydes (75). They have also been used for the formation of semiconductors (qv) by vapor-phase epitaxy (76), as catalysts or cocatalysts for a number of polymeri2ation reactions (77), and for many other industrial purposes. 

Clearly, there are situations where we have to give up this assumption. A typical case is molecular beam epitaxy (MBE) (see [3,12-14] and [15-19]), where particles are shot onto the surface of a crystal rather than condensing slowly from a thermally equilibrated vapor-phase. In this case we will have to be very specific about all the experimental boundary conditions and... 

Chemical vapor deposition may be defined as the deposition of a solid on a heated surface from a chemical reaction in the vapor phase. It belongs to the class of vapor-transfer processes which is atomistic in nature, that is the deposition species are atoms or molecules or a combination ofthese. Beside CVD, they include various physical-vapor-deposition processes (PVD) such as evaporation, sputtering, molecular-beam epitaxy, and ion plating. 

Gandhi, S., and Bhat, I., Organometallic Vapor Phase Epitaxy Features, Problems New Approaches, MRS Bulletin, pp. 39-43 (Nov. 1988)... 

Watanabe, N. Nakanisi, T. Dapkus, P. D., Eds. Metalorganic Vapor Phase Epitaxy, Proceedings of the 4th International Conference (MOVPE-4), Hakone, 1988. 

Stringfellow, G. B. Organometallic Vapor Phase Epitaxy Theory and Practice-, Academic Press San Diego, 1989. 

The primary methodologies for forming thin-film materials with atomic level control are molecular beam epitaxy (MBE) [4-9], vapor phase epitaxy (VPE) [10-12], and a number of derivative vacuum based techniques [13]. These methods depend on controlling the flux of reactants and the temperature of the substrate and reactants. 

Much of the theory of scaling analysis was developed for molecular beam epitaxy (MBE), and there are some challenges in transferring the treatment to electrodeposition. In MBE, the incident atoms originate at a source at high temperature, arrive at the growth front from a vapor phase that is not in internal equilibrium, attach... 

MOCVD (metal-organic chemical vapor deposition), OMVPE (organometallic vapor-phase epitaxy), and HVPE (hydride vapor-phase epitaxy) have some... 

The two-step process of epitaxial polymerization has been applied to symmetrically substituted diacetylenes First, the monomers have been crystallized epitaxially on alkali halides substrates from solution and the vapor phase. The oriented monomer crystals are then polymerized under the substrate s influence by gamma-irradiation. The diacetylenes in this study are 2,4-hexadiyn-l,6-diol (HD) and the bis-phenylurethane of 5,7-dodecadiyn-l,12-diol (TCDU). The polydiacetylene crystal structures and morphologies have been examined with the electron microscope. Reactivity and polymorphism are found to be controlled by the substrate. 

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