Lateral epitaxial overgrowth

Kinoshita [59] applied this technique to non-planar structured (111) silicon substrates. Despite the irregular topology of the substrate, epitaxial layers with flat top surfaces were always produced. Thanks to the formation of (111) facets in the plane of the epitaxial film (with Sn melt at 900°C). 

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Figure 7.11. Schematic illustrations of (a), (b) epitaxial lateral overgrowth, ELO, and (c) the mechanism of formation of scepter quartz.

ST. Nishinaga, T. Nakano, and S. Zhang, Epitaxial lateral overgrowth of GaAs by LPE, JpmJ.Appl. Phys., 27,1988, L964-7... 

It should be noted that a reduction in the threading dislocation density in GaN has been achieved through the application of selective area epitaxy and lateral epitaxial overgrowth ((LEO), also known as epitaxial lateral overgrowth (ELO), or epitaxial laterally grown GaN (ELOG)). This epitaxial technique is discussed in Datareview B2.10 in this book. 

B2.9 Selective area growth and epitaxial lateral overgrowth of GaN... 

FAB FEA FEB FET FFP FIB FIELO FIR FLAPW FP FP-LMTO FWHM fast atom beam free A exciton free B exciton field effect transistor far field pattern focused ion beam facet-initiated epitaxial lateral overgrowth far infrared reflectance full-potential linearised augmented plane wave Fabry-Perot full-potential linear muffin-tin orbital full wave at half maximum... 

E. Frayssinet, B. Beaumont, J. P. Faurie, P. Gibart, Z. Makkai, B. Pecz, P. Lefebvre and P. Valvin, Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy , MRS Internet J. Nitride Semicon. Res., 7, 8 (2002). 

Figure 6.1 Conventional epitaxy lateral overgrowth, (a) GaN templates patterned with Si02 strips along[1120]. (b) GaN growth vertically through windows and laterally over Si02 mask. During this process, extend defects can be efficiently blocked by Si02 mask...

K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake,Y. Iyechika and T. Maeda, Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) ,/. Cryst. Growth, 221, 316-326 (2000). 

P. Vennegues, B. Beaumont, V. Bousquet, M. Vaille and P. Gibart, Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods ,/. Appl. Phys., 87, 4175 (2000). 

A. Sakai, H. Sunakawa, A. Kimur, and A. Usui, Dislocation propagation in GaN films formed by epitaxial lateral overgrowth,/. Electron Microsc. 49, 323-330 (2000). 

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