Atomic-layer-epitaxy

C2.18.4.1 HOMOEPITAXY OF GALLIUM ARSENIDE BY ATOMIC LAYER EPITAXY... [Pg.2937]

Ozeki M, Usui A, Yoshinobu A and Nishizawa J (eds) 1994 ALES Proc. 3rd Int. Conf on Atomic Layer Epitaxy (Sendai, Japan, May 1994) Appl. Surf. Sc/. 82/83... [Pg.2944]

Mathe MK, Cox SM, Venkatasamy V, Uwe Happek, Stickney JL (2005) Formation of HgSe thin films using electrochemical atomic layer epitaxy. J Electrochem Soc 152 C751-C755... [Pg.56]

Lindroos S, Kanniainen T, Leskela M (1994) Growth of ZnS thin films by liquid-phase atomic layer epitaxy (LPALE). Appl Surf Sci 75 70-74... [Pg.150]

Numerous works have been implemented on tellurium electrochemistry and its adsorption at metal surfaces. The morphological structures of electrodeposited Te layers at various stages of deposition (first UPD, second UPD, and bulk deposition) are now well known [88-93]. As discussed in the previous paragraphs, Stickney and co-workers have carried out detailed characterizations of the first Te monolayer on Au single-crystal surfaces in order to establish the method of electrochemical atomic layer epitaxy of CdTe. [Pg.176]

Cachet H, Cortes R, Froment M, Mamin G (1999) Epitaxial growth of electrodeposited cadmium selenide on (111) gallium arsenide. Philos Mag Lett 79/10 837-840 Muthuvel M, Stickney JL (2006) CdTe Electrodeposition on InP(lOO) via Electrochemical Atomic Layer Epitaxy (EC-ALE) Studies Using UHV-EC. Langmuir 22 5504-5508 Streltsov EA, Osipovich NP, Ivashkevich LS, Lyakhov AS (1999) Effect of Cd(ll) on electrodeposition of textured PbSe. Electrochim Acta 44 2645-2652 Beaunier L, Cachet H, Cortes R, Froment M (2000) Electrodeposition of PbSe epitaxial films on (111) InP. Electrochem Commun 2 508-510... [Pg.199]

Goodman CHL, Pessa MV (1986) Atomic layer epitaxy. J Appl Phys 60 R65-R81 Gregory BW, Stickney JL (1991) Electrochemical atomic layer epitaxy (ECALE). J Electroanal Chem 300 543-561... [Pg.199]

Gregory BW, Suggs DW, Stickney JL (1991) Conditions for the deposition of CdTe by electrochemical atomic layer epitaxy. J Electrochem Soc 138 1279-1284 Suggs DW, Stickney JL (1991) Characterization of atomic layers of tellurium electrodeposited on the low-index planes of gold. J Phys Chem 95 10056-64 Suggs DW, Stickney JL (1993) Studies of the structures formed by the alternated electrodeposition of atomic layers of Cd and Te on the low-index planes of Au. 1. LEED and Auger studies. Surf Sci 290 362-374... [Pg.199]

Varazo K, Lay MD, Sorenson TA, Stickney JL (2002) Formation of the first monolayers of CdTe on Au(l 11) by electrochemical atomic layer epitaxy (EC-ALE) studied by LEED, Auger, XPS, and in-situ STM. J Electroanal Chem 522 104-114... [Pg.200]

Colletti LP, Teklay D, Stickney JL (1994) Thin-layer electrochemical studies of the oxidative underpotential deposition of sulfur and its application to the electrochemical atomic layer epitaxy deposition of CdS. J Electroanal Chem 369 145-152... [Pg.200]

Foresti ML, Pezzatini G, CavaUini M, Alois G, Innocent M, GuideUi R (1998) Electrochemical atomic layer epitaxy deposition of CdS on Ag(lll) An electrochemical and STM investigation. J Phys Chem B 102 7413-7420... [Pg.200]

Innocent M, Pezzatini G, Fomi F, Foresti ML (2001) CdS and ZnS deposition on Ag(l 11) by electrochemical atomic layer epitaxy. J Electrochem Soc 148 C357-C362... [Pg.200]

Colletti LP, Flowers Jr BH, Stickney JL (1998) Formation of thin films of CdTe, CdSe, and CdS by electrochemical atomic layer epitaxy. J Electrochem Soc 145 1442-1449... [Pg.200]

Colleti LP, Thomas S, WUmer EM, Stickney JL (1997) Thin layer electrochemical studies of ZnS, ZnSe, and ZnTe formation by Electrochemical Atomic Layer Epitaxy (ECALE). Mater Res Soc Symp Proc 451 235. [Pg.200]

Venkatasamy V, Mathe MK, Cox SM, Happek U, Stickney JL (2006) Optimization studies of HgSe thin film deposition by electrochemical atomic layer epitaxy (EC-ALE). Electrochim Acta 51 4347-4351... [Pg.201]

Torimoto T, Obayashi A, Kuwabata S, Yasuda H, Mori H, Yoneyama H (2000) Preparation of size-quantized ZnS thin films using electrochemical atomic layer epitaxy and their photoelectrochemical properties. Langmuir 16 5820-5824... [Pg.201]

Torimoto T, Takabayashi S, Mori H, Kuwabata S (2002) Photoelectrochemical activities of ultrathin lead sulfide films prepared by electrochemical atomic layer epitaxy. J Electroanal Chem 522 33-39... [Pg.201]

Qiao Z, Shang W, Wang C (2005) Fabrication of Sn-Se compounds on a gold electrode by electrochemical atomic layer epitaxy. J Electroanal Chem 576 171-175... [Pg.201]

Zou S, Weaver MJ (1999) Surface-enhanced Raman spectroscopy of cadmium sulfide/cadmium selenide superlattices formed on gold by electrochemical atomic-layer epitaxy. Chem Phys Lett 312 101-107... [Pg.202]

CavaUini M, Facchini M, Albonetti C, Biscarini F, Innocent M, Loglio F, Salvietti E, Pezzatini G, Forest ML (2007) Two-dimensional self-organization of CdS ultra thin films by confined electrochemical atomic layer epitaxy growth. J Phys Chem C Lett 111 1061-1064... [Pg.205]

Vaidyanathan R, Stickney JL, Cox SM, Compton SP, Happek U (2003) Formation of InaSes thin films and nanostructures using electrochemical atomic layer epitaxy. J Electroanal Chem 559 55-61... [Pg.206]

In molecular beam epitaxy (MBE), the constituent elements of the desired film in the form of molecular beams are deposited epitaxially onto a heated crystalline substrate. These molecular beams are typically from thermally evaporated elemental sources (e.g., evaporation of elemental As produces molecules of As2, As3, and As4). A refinement of this is atomic layer epitaxy (ALE) (also known as atomic layer deposition, ALD) in which the substrate is exposed alternately to two... [Pg.702]

The deposition of a wide range of materials using beams of elemental sources in high-vacuum apparatus (10-4—10-8 torr), essentially by physical methods, is known as molecular beam epitaxy (MBE)8 12 and atomic layer epitaxy (ALE). These methods will be mentioned where there is an overlap with CVD techniques, but will not be fully reviewed. (They are mentioned also in Chapter 9.15). [Pg.1012]

Mg2+ ion. 49 has been used to deposit MgO by atomic layer epitaxy,222 and is commonly employed as a />-type dopant for semiconductors, particularly GaAs,223 GaN,224,225 and AlGaN.226 In GaN, Mg doping induces a blue 2.8 eV photoluminescence band arising from donor-acceptor (D-A) pair recombination.227 It is likely that isolated Mg... [Pg.96]

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