MOVPE epitaxy

ZnS MOVPE cold-wall horizontal reactor Epitaxially cubic phase grown on (lll)Si growth at 400 °C. Without carrier gas, hexagonal a-ZnS of poor morphology and crystallinity 182... 

Watanabe, N. Nakanisi, T. Dapkus, P. D., Eds. Metalorganic Vapor Phase Epitaxy, Proceedings of the 4th International Conference (MOVPE-4), Hakone, 1988. 

Static 75As NMR of the CT in powdered films of Al Ga As has been used to obtain information about possible ordering in this alloy. The milligram quantities used were obtained by an epitaxial lift-off process from the MOVPE growth substrate and subsequent pulverization. Signals from 75As[A14] and 75As[Ga4]... 

MOVPE Metal Organic Vaponr Phase Epitaxy... 

The silicon is etched away in the window 6 down to and exposing the sapphire surface 7. The surface 7 is cleaned and a buffer layer 8 of CdTe is grown. In the next step two layers 9 and 10 of HgCdTe are grown by metal-organic vapour phase epitaxy, MOVPE. The layers 9 and 10... 

Cyclopentadienyl compounds have been thoroughly investigated as suitable precursors to rare earth doped semiconductors in MOCVD (metal-organic chemical vapor deposition) or MOVPE (metal-organic vapor phase epitaxy) processes [283]. The use of btsa complexes for the same purpose has appeared in the literature very recently [285]. Typical process conditions are shown in Scheme 14. It was found that the carbon contamination of the deposited metal is less in the btsa case. 

The mechanical properties of materials involve various concepts such as hardness, shear and bulk modulus. The group III nitrides are now mostly used as fihns or layers grown by metal organic vapour phase epitaxy (MOVPE) or molecular beam epitaxy (MBE) on sapphire, GaAs or SiC. The lattice parameters of the substrate do not generally match those of the deposited layer, and therefore, stresses appear at the interface and in the layer and modify its physical properties. Hence, it is necessary to have a good knowledge of these properties. 

Hydrogen plays an important role in III-V semiconductors especially in the nitrides, passivating the electrical activity of shallow and deep level impurities. This is more important in GaN grown by metal-organic vapour phase epitaxy (MOVPE) than by molecular beam epitaxy (MBE). Using SIMS... 

Mg-doped In0.09Ga0.91N epitaxial layers have been grown on sapphire substrates by MOVPE [21], Room temperature hole concentration as high as 7 x 1017 cm 3 was obtained and an activation energy of... 

FIGURE 2 compares the room temperature PL data from Zn-implanted GaN samples annealed at 1150°C and 1250°C under 10 kbar N2 with an MOVPE-doped GaN Zn reference sample and the undoped GaN/sapphire starting material [8], The MOVPE Zn dopant concentration was designed to closely match the implantation profile to provide an accurate comparison of the relative Zn luminescence efficiencies. The spectra observed in all of the Zn-doped samples are similar, differing rally in intensity, which confirms the activation of the implanted Zn acceptors. The sample annealed at 1250°C shows intense Zn PL roughly an order of magnitude stronger than in the epitaxial GaN Zn reference sample... 

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