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Gallium arsenide molecular beam epitaxy

S. Muthuvenkatranian, S. Gorantla, R. Venkat, D. L. Dorsey. Theoretical study of antisite arsenic incorporation in the low temperature molecular beam epitaxy of gallium arsenide. J App Phys S5 5845, 1998. [Pg.924]

Gallium arsenide for solid-state lasers and fast memory chips can be formed by molecular beam epitaxy through the reaction... [Pg.369]

Masselink, W. T., Henderson, T., Klem, J., Fischer, R., Pearah, P., Morkoc, H., Hafich, M., Wang, P. D., and Robinson, G. Y. Optical properties of gallium arsenide on (lOO)-silicon using molecular beam epitaxy. Appl. Phys. Lett. 45, 1309-1311 (1984). [Pg.71]

Molecular Beam Epitaxy (MBE) Gallium Arsenide Ga/AsHj... [Pg.232]

High exposures to arsine can also occur during the maintenance of solid source molecular beam epitaxy (MBE) systems for gallium arsenide. Room air concentrations of 0.08 ppm were detected in one study when the chamber of the MBE unit was opened for maintenance. The authors hypothesized that transient arsine generation may be caused by a reaction of very fine particulate arsenic with water vapor with aluminum acting as a catalyst. ]... [Pg.233]

See other pages where Gallium arsenide molecular beam epitaxy is mentioned: [Pg.391]    [Pg.392]    [Pg.356]    [Pg.83]    [Pg.487]    [Pg.252]    [Pg.23]    [Pg.367]   
See also in sourсe #XX -- [ Pg.4 , Pg.4 , Pg.8 , Pg.10 ]



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