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Transistor field effect

Much interest in biosensors has been attached to the potential application of this highly expanding field of research to the solution of a variety of problems that occur in clinical diagnostics, food industry, agriculture and environment industry. Some of the other reasons that have made this area very attractive include those (i) that provide quick, selective and reliable information on the measurement species, (ii) that yield measurable signal, (iii) that require minimum pretreatment of the samples, (iv) that are inexpensive and can be used repetitively. [Pg.412]

Various publications in recent years indicate organic conducting polymers as a convenient tool for the immobilisation of enzymes at the electrode surface and its interaction with metallic or carbon electrode surfaces. The application of conducting polymers in analytical chemistry has recently been reviewed [126-130]. Some other reviews have been devoted to their use in design of biosensors [131, 132]. [Pg.412]

Immobilisation of biomolecules on the surface of an effective matrix with maximum retention of their biological recognition properties is a crucial problem for the commercial development of a biosensor. Different methods of immobilisation have been used. One such method is electrochemical entrapment. Several conducting polymers can be deposited electrochemically and, in the process, a biological molecule can be entrapped. This process is also useful in the fabrication of microsensors in preparation of a multilayered structure with one or more enzymes/biomolecules layered within a multilayered copolymer for analysis of multiple analytes [133-135]. A number of reports have appeared on immobilisation of biomolecules using electrochemical entrapment [130, 131, 136-143]. [Pg.412]

Another procedure for the immobilisation of biomolecules is the covalent binding of enzyme to a conducting polymer film. This is essentially a two-step procedure based on the formation of a funaionahsed conduaing polymer film followed by the covalent binding of the enzyme at the funaional groups on the polymer surface. The major advantage associated with this procedure Ues in the independent optimisation of conditions required for the synthesis of the polymer with respea to solvent, electrolyte salts, film thickness and side reactions. This is [Pg.412]

Conducting polymers such as polypyrrole [127] and its derivatives [156,157], polyaniline [158-164], polyindole [137] and poly-o-aminobenzoic acid have recently been used for the fabrication of biosensors. A few biosensors based on insulating electropolymerised films like polyphenols, poly(o-phenylenediamine), poly(dichlorophenolindophenol) and overoxidised polypyrrole have also been elaborated [165-167].  [Pg.413]


Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-... Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...
Electron tunnelling tlirough monolayers of long-chain carboxylic acids is one aspect of interest since it was assumed tliat such films could be used as gate electrodes in field-effect transistors or even in devices depending on electron tunnelling [24, 26, 35, 36, 37 and 38]- It was found, however, tliat tlie whole subject depends critically on... [Pg.2614]

DCFET. See Doped channel field-effect transistor. [Pg.279]

MESFET. See Metal semiconductor field-effect transistor. [Pg.607]

Metal oxide semiconductor field-effect transistor pOSFEQ... [Pg.609]

MODFET. See Modulation doped field-effect transistor. [Pg.640]

Because of the very large resistance of the glass membrane in a conventional pH electrode, an input amplifier of high impedance (usually 10 —10 Q) is required to avoid errors in the pH (or mV) readings. Most pH meters have field-effect transistor amplifiers that typically exhibit bias currents of only a pico-ampere (10 ampere), which, for an electrode resistance of 100 MQ, results in an emf error of only 0.1 mV (0.002 pH unit). [Pg.467]

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. [Pg.348]

Selenium and selenium compounds are also used in electroless nickel-plating baths, delayed-action blasting caps, lithium batteries, xeroradiography, cyanine- and noncyanine-type dyes, thin-film field effect transistors (FET), thin-film lasers, and fire-resistant functional fluids in aeronautics (see... [Pg.338]

Novel glycerol and formaldehyde selective sensors based on pEI-Sensitive Field Effect Transistors as transducers and Glycerol Dehydrogenase and Formaldehyde Dehydrogenase as biorecognition elements have been developed. The main analytical parameters of the sensors have been investigated and will be discussed. [Pg.303]

The use of arachidic acid and different amphiphilic calixarenes for modifying of field effect transistor sensors and determination of some volatile organic contaminants will be considered. [Pg.308]

Electronics Production of circuit boards (producing contacts in boreholes), modified electrolytic condensers, modified field effect transistors, molecular electronics (unidirectional conductors), photostructural lacquers based on ICPs (electron beam lithography), novel photoluminescent diodes (LED), data storage (e.g. spatially resolved eleclrochromics)... [Pg.888]

By 1988, a number of devices such as a MOSFET transistor had been developed by the use of poly(acetylene) (Burroughes et al. 1988), but further advances in the following decade led to field-effect transistors and, most notably, to the exploitation of electroluminescence in polymer devices, mentioned in Friend s 1994 survey but much more fully described in a later, particularly clear paper (Friend et al. 1999). The polymeric light-emitting diodes (LEDs) described here consist in essence of a polymer film between two electrodes, one of them transparent, with careful control of the interfaces between polymer and electrodes (which are coated with appropriate films). PPV is the polymer of choice. [Pg.335]

F. Dessenne, D. Cichocka, P. Desplanques, R. Fauquembergue. Comparison of wurtzite and zinc blende III-V nitrides field effect transistors a 2D Monte Carlo device simulation. Mater Sci Eng B 50 315, 1997. [Pg.925]


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All-organic field effect transistor

Application of Field-Effect Transistors to Label-Free Electrical DNA Biosensor Arrays

Biosensors field-effect transistor-based

Bipolar field-effect transistors

Carbon field-effect transistor

Carbon nanotube field-effect transistors

Chemical field effect transistor

Chemically effective field-effect transistor

Chemically modified field-effect transistors

Chemically sensitive field effect transistors

Chemically sensitive field effect transistors CHEMFETs)

Contact effects in organic field-effect transistors

Copolymers field effect transistors

Dielectric material-gate field effect transistor

EGFET (extended gate field effect transistor

Electrical properties field-effect transistors

Electroactive oligothiophenes and polythiophenes for organic field effect transistors

Electrode field effect transistor

Enzymatically coupled field effect transistor

Enzyme field effect transistor

Enzyme field-effect transistors (ENFETs

FET—See Field effect transistor

Ferroelectric field effect transistors

Fibrous field-effect transistors

Field Effect Transistors for Transport

Field effect transistor diamond

Field effect transistor extended gate

Field effect transistor operational principle

Field effect transistor sensor

Field effect transistor, addressing

Field effect transistor-based biosensor

Field effect transistor-based sensors

Field effect transistors, device characteristics

Field transistors

Field-Effect Transistor Arrays

Field-Effect Transistor-Based Aptasensors

Field-Effect Transistors Based on Single SWCNTs

Field-Effect Transistors with Semiconductor Gate

Field-effect transistor P3HT-based

Field-effect transistor accumulation layer

Field-effect transistor ambipolar

Field-effect transistor applications

Field-effect transistor capacitance

Field-effect transistor channel material

Field-effect transistor characteristics

Field-effect transistor chemically selective

Field-effect transistor current-voltage curves

Field-effect transistor devices

Field-effect transistor dielectrics

Field-effect transistor drain electrode

Field-effect transistor electrospun

Field-effect transistor fabrication

Field-effect transistor gate electrode

Field-effect transistor gate voltage

Field-effect transistor hole

Field-effect transistor hole mobilities

Field-effect transistor operation

Field-effect transistor output characteristics

Field-effect transistor performance

Field-effect transistor sensor configuration

Field-effect transistor sensor matrix

Field-effect transistor sensors sensor configuration

Field-effect transistor silicon nitride

Field-effect transistor solution-processed organic semiconductor

Field-effect transistor source electrode

Field-effect transistor stability

Field-effect transistor standard potential

Field-effect transistor suspended gate

Field-effect transistor technology

Field-effect transistor transfer characteristics

Field-effect transistor transport

Field-effect transistor, schematic

Field-effect transistors Metal-oxide-semiconductor FETs

Field-effect transistors biosensors

Field-effect transistors device architectures

Field-effect transistors gate bias

Field-effect transistors nanoscale

Field-effect transistors source-drain current

Field-effect transistors structure

Field-effect transistors substituted oligothiophenes

Field-effect transistors threshold voltage

Field-effect transistors, FETs

Field-effect transistors, function

Flow Field-Effect Transistor

Gate Dielectrics and Surface Passivation Layers for Organic Field Effect Transistors

Graphene field effect transistors

Heterojunction field-effect transistors

IGFET, (insulated-gate field effect transistor

Immuno field effect transistors

Insulated gate field-effect transistor

Insulated gate field-effect transistors IGFETs)

Ion Sensitive Organic Field-Effect Transistors (ISOFETs)

Ion selective field effect transistors ISFETs)

Ion-selective field effect transistor Ionophore

Ion-selective field effect transistor acyclic

Ion-selective field effect transistor guanidinium

Ion-selective field effect transistor macrocyclic

Ion-selective field effect transistor organometallic

Ion-selective field effect transistors

Ion-selective field-effect transistor (ISFET

Ion-sensitive field effect transistor

Ion-sensitive field effect transistor ISFET)

Ion-sensitive field effect transistor device

Ion-sensitive field effect transistors (ISFETs

Junction field-effect transistor

Light-emitting field-effect transistors

Light-emitting organic field-effect transistors

MISFET Field Effect Transistor

MOS field-effect transistor

MOSFET field-effect transistor

MOSFETs field-effect transistor

Mechanisms of Hysteresis in Polymer Field-Effect Transistors

Metal insulator semiconductor field effect transistor technolog

Metal oxide field effect transistor

Metal oxide semiconducting field effect transistor

Metal oxide semiconductor field effect transistor switching circuit

Metal oxide semiconductor field effect transistors, MOSFETs

Metal oxide semiconductor field-effect transistor

Metal oxide semiconductor field-effect transistor MOSFET)

Metal oxide semiconductor field-effect transistor, principles

Metal oxide silicon field-effect transistor MOSFET)

Metal oxide-silicon field-effect transistors

Metal-Insulator-Semiconductor Field Effect Transistor

Metal-oxide-semiconductor field-effect transistor development

Metal-oxide-semiconductor field-effect transistor, characteristics

Metal-semiconductor field effect transistor

Metal-semiconductor field effect transistors MESFETs)

Model oligothiophene field-effect transistors

Nanotube field effect transistor

Nanowire field-effect transistors

Nanowires field-effect transistors

Nucleic acids field-effect transistors

Oligo- and Polythiophene Field Effect Transistors

Oligothiophenes field-effect transistors

Organic Field Effect Transistors (FETs)

Organic Field Effect Transistors principles

Organic Field-Effect Transistors for Spin-Polarised Transport

Organic Field-Effect Transistors ionic

Organic Field-Effect Transistors liquid

Organic Field-Effect Transistors molecular, example

Organic Field-Effect Transistors schematic

Organic Field-Effect Transistors semiconductors

Organic Field-Effect Transistors sexithiophene

Organic Field-Effect Transistors solids

Organic field effect transistors OFET electrodes

Organic field effect transistors OFET)

Organic field effect transistors device architectures

Organic field effect transistors device configurations

Organic field effect transistors device geometries

Organic field effect transistors material requirements

Organic field effect transistors oligomers

Organic field effect transistors performance characterization

Organic field effect transistors selenophenes

Organic field effect transistors solution-processable materials

Organic field-effect transistor ambipolar

Organic field-effect transistor bottom-contact

Organic field-effect transistor carrier density

Organic field-effect transistor charge transport

Organic field-effect transistor contact resistance

Organic field-effect transistor development

Organic field-effect transistor device

Organic field-effect transistor fabrication

Organic field-effect transistor ideal

Organic field-effect transistor integrated circuits based

Organic field-effect transistor mobile charges

Organic field-effect transistor ohmic contacts

Organic field-effect transistor patterning

Organic field-effect transistor pentacene

Organic field-effect transistor performance

Organic field-effect transistor potential

Organic field-effect transistor rubrene

Organic field-effect transistor shift

Organic field-effect transistor single-crystal

Organic field-effect transistor transport

Organic field-effect transistor vacuum-gap

Organic field-effect transistors

Organic field-effect transistors (OFETs

Organic field-effect transistors device fabrication process

Organic field-effect transistors drain

Organic field-effect transistors drain current

Organic field-effect transistors electronic characterization

Organic field-effect transistors frequency

Organic field-effect transistors high mobility

Organic field-effect transistors saturation mobility

Organic field-effect transistors source

Organic field-effect transistors source-drain current

Organic field-effect transistors source-drain voltage

Organic field-effect transistors source-gate voltage

Organic field-effect transistors structure

Organic field-effect transistors threshold voltage

Organic polymer field-effect transistor

Oxide semiconductor-gate field effect transistor

Palladium gate field effect transistors

Physics of Organic Field-Effect Transistors

Piezoelectric oxide semiconductor field effect transistor

Piezoelectric oxide semiconductor field effect transistor POSFET)

Planar transistors field-effect transistor

Polyaniline field-effect transistors

Polymer Nanofiber Field-effect Transistors

Polymer field-effect transistor

Polymer field-effect transistor frequency

Polymer field-effect transistor on Si I SiO2 wafer

Polythiophenes field-effect transistors

Proteins field-effect transistors

Redox Field Effect Transistor

Reference field-effect transistors

SGFET (suspended gate field effect transistors

Sensitive Organic Field-effect Transistors

Sensors based on ion-selective field-effect transistors

SiC Field Effect Transistors

Single-crystal organic field-effect transistors OFETs

Single-crystal organic field-effect transistors charge carrier transport

Single-walled carbon nanotube field effect transistor

Solution Processed Donor-Acceptor Copolymer Field-Effect Transistors

Surface field effect transistors

The Ion-Selective Field Effect Transistor (ISFET)

The Ion-Selective Field-Effect Transistor

Thienothiophene copolymers in field effect transistors

Transducers field effect transistor-based

Unipolar Field-Effect Transistors

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