Mechanisms of Hysteresis in Polymer Field-Effect Transistors

Characteristics and Mechanisms of Hysteresis in Polymer Field-Effect Transistors 

Hysteresis effects usually occur in organic field-effect transistors (OFET) or MIS capacitors [1-4], A detailed literature survey will be given in Section 16.2. In spite of the large number of publications, systematic investigations of the hysteresis effects are rare. Examples are discussed e.g. in Ref [5]. 

In Section 16.4 we come back to hysteresis effects by trap recharging. We have shown in Ref [10] that this mechanism can lead to hysteresis in quasistatic CF-curves of organic MIS capacitors. However, the form of the curves was qualitatively different from the observed ones. This analysis is extended 

The BP mechanism for hysteresis in field-effect devices [6] proposed by us was strongly supported by the experimental determination of a rate eonstant for a second order reaetion of Ps from voltage stress measurements [11, 12] which has been attributed to the BP formation. However, the above mentioned alternative of PPs requires a eritieal revisal of equilibrium for systems with Ps, and doubly eharged polymer states, whieh is presented in Section 16.5. The ki-neties and hysteresis in organie MIS devices due to formation and dissoeiation are then analysed in Section 16.6. Also a further mechanism is considered whieh is eonneeted with the formation of different complexes between Ps, BPs and mobile ions. Conelusions are drawn in Section 16.7. 

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Paasch G, Scheinert S, Herasimovich A, Hdrselmann I, Lindner Th (2008) Characteristics and mechanisms of hysteresis in polymer field-effect transistors. Phys Stat Sol A 205 534-548... 

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