MOSFETs field-effect transistors

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...

MOSFET. See Metal oxide semiconductor field-effect transistor. 

By 1988, a number of devices such as a MOSFET transistor had been developed by the use of poly(acetylene) (Burroughes et al. 1988), but further advances in the following decade led to field-effect transistors and, most notably, to the exploitation of electroluminescence in polymer devices, mentioned in Friend s 1994 survey but much more fully described in a later, particularly clear paper (Friend et al. 1999). The polymeric light-emitting diodes (LEDs) described here consist in essence of a polymer film between two electrodes, one of them transparent, with careful control of the interfaces between polymer and electrodes (which are coated with appropriate films). PPV is the polymer of choice. 

Nanocrystals are receiving significant attention for nano-electronics application for the development of future nonvolatile, high density and low power memory devices [1-3]. In nanocrystal complementary metal oxide semiconductor (CMOS) memories, an isolated semiconductor island of nanometer size is coupled to the channel of a MOS field effect transistor (MOSFET) so that the charge trapped in the island modulates the threshold voltage of the transistor (Fig. 1). 

The ISFET is an electrochemical sensor based on a modification of the metal oxide semiconductor field effect transistor (MOSFET). The metal gate of the MOSFET is replaced by a reference electrode and the gate insulator is exposed to the analyte solution or is coated with an ion-selective membrane as illustrated in Fig. 

The operation principle of these TFTs is identical to that of the metal-oxide-semiconductor field-effect transistor (MOSFET) [617,618]. When a positive voltage Vg Is applied to the gate, electrons are accumulated in the a-Si H. At small voltages these electrons will be localized in the deep states of the a-Si H. The conduction and valence bands at the SiN.v-a-Si H interface bend down, and the Fermi level shifts upward. Above a certain threshold voltage Vth a constant proportion of the electrons will be mobile, and the conductivity is increased linearly with Vg - Vih. As a result the transistor switches on. and a current flows from source to drain. The source-drain current /so can be expressed as [619]... 

Fig. 2.16. Ion-sensitive field effect transistor (intersection and symbol), (a) n-p-n transistor, (b) IGFET (MOSFET), (c) ISFET.

Field-effect transistors (FETs) Heterojunction bipolar transistors (HBTs) High electron mobility transistors (HEMTs) Metal oxide semiconductor FETs (MOSFETs) Single-electron transistors (SETs) Single-heterojunction HBTs (SH-HBTs) Thin-film transistors (TFTs) hydrogenated amorphous silicon in, 22 135... 

At present, modern power components such as GTO (Gated Transistor On/Off device), IGBT (Isolated Gate Bipolar Transistor), Power Mosfet (Metal Oxide Field Effect Transistor), and high voltage capacitors are easily commercially available and perfectly adequate to realize the energy storage... 

Liu et al. have reported the development and applications of the commonly used local anaesthetic sensitive field-effect transistor(FET) [56]. The ion-pair complexes of procaine with silicotungstate, tetraphenylborate, or reineckate were prepared as electroactive materials for a drug sensor. These active materials were coated onto the platinum draw wire of a MOSFET to make a local anaesthetic-sensitive FET that... 

MOSFETs. A type of semiconductor device that utilizes oxide ceramics is a metal-oxide-semiconductor field-effect transistor, abbreviated as MOSFET. Just like the semiconductor junction devices of Section 6.1.1.6, the MOSFET is composed of n-and / -type semiconductor regions within a single device, as illustrated in Figure 6.36. 

Metal oxide semiconductor field-effect transistors (MOSFETs) are field effect transistors with a thin film of silicon dioxide between the gate electrode and the semiconductor. The charge on the silicon dioxide controls the size of the depletion zone in the polype semiconductor. MOSFETs are easier to mass produce and are used in integrated circuits and microprocessors for computers and in amplifiers for cassette players. Traditionally, transistors have been silicon based but a recent development is field-effect transistors based on organic materials. 

MOS metal oxide sensor, MOSFET metal oxide semiconductor field-effect transistor, IR infrared, CP conducting polymer, QMS quartz crystal microbalance, IMS ion mobility spectrometry, BAW bulk acoustic wave, MS mass spectrometry, SAW siuface acoustic wave, REMPI-TOFMS resonance-enhanced multiphoton ionisation time-of-flight mass spectrometry... 

Ion-Selective Field Effect Transistors [22b,c,d] An ion-selective field effect transistor (ISFET) is a hybrid of an ion-selective electrode and a metal-oxide semiconductor field effect transistor (MOSFET), the metal gate of the MOSFET being replaced by or contacted with a thin film of a solid or liquid ion-sensitive material. The ISFET and a reference electrode are immersed in the solution containing ion i, to which the ISFET is sensitive, and electrically connected as in Fig. 5.37. A potential which varies with the activity of ion i, o(i), as in Eq. (5.38), is developed at the ion-sensitive film ... 

Figure 19.8—A selective electrode designed from a MOSFET (metal oxide semiconductor field effect transistor). A specific reaction can be monitored by putting an enzyme in contact with the electrodes. This schematic shows the three electrodes used for amperometric measurement.

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