Field-effect transistor standard potential

ADP AFP ab as ALAT AP ASAT ATP BQ BSA CEH CK CME COD con A CV d D E E EC ECME EDTA EIA /e FAD FET FIA G GOD G6P-DH HBg HCG adenosine diphosphate a-fetoprotein antibody antigen alanine aminotranferase alkaline phosphatase aspartate aminotransferase adenosine triphosphate benzoquinone bovine serum albumin cholesterol ester hydrolase creatine kinase chemically modified electrode cholesterol oxidase concanavalin A coefficient of variation (relative standard deviation) layer thickness diffusion coefficient enzyme potential Enzyme Classification enzyme-chemically modified electrode ethylene diamine tetraacetic acid enzyme immunoassay enzyme loading factor flavin adenine dinucleotide field effect transistor flow injection analysis amplification factor glucose oxidase glucose-6-phosphate dehydrogenase hepatitis B surface antigen human chorionic gonadotropin... 

CHEMFET devices or chemically sensitive field-effect transistors are potentiometric devices in which the metal layer of a solid-state insulated gate field-effect transistor (IGFET) f29] is replaced with a chemically sensitive electroconductive polymer membrane film. Changes in polymer membrane potential modulate the drain impedance of the space-charge region beneath the insulator. The result is a change in drain current /o under a fixed drain voltage Vd- The potential of the membrane may be modulated in the standard way (as in po-tentiometry, above) or may be modulated by an inert electrode placed beneath the film (but isolated from both the source and drain electrodes) and connected to an efficient electrode for the candidate analyte [30]. 

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