Field-effect transistor P3HT-based

The first demonstration of the use of a conducting poljmo based LB film as the active element of an electronic device was made by Stubb s group in Hnland [38]. In diis woik, it was shown that mixed LB films of poly(3-hexylthiophene) and arachidic add (60 mole % P3HT) could be fabricated into wori g field effect transistors Q ETs) in which the undoped polymer served as the active semiconductor. Devices with film thicknesses ranging from a single monolayer (37A) to 35 monolayas (1295 A) were fabricated into... 

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