Ambipolar Field-Effect Transistors

Shimada, T. Sugau, T. Ohno, Y. Kishimoto, S. Mizutani, T. Yoshida, H. Okazaki, T. Shinohara, H. (2004). Double-wall carbon nanotube field-effect transistors Ambipolar transport Characteristics. Applied Physics Letters, 84, 2412-2414. 

Anthopoulos, T.D., Tanase, C., Setayesh, S., Meijer, E.J., Hummelen, J.C., Blom, P.W.M., and de Leeuw, D.M. (2004) Ambipolar organic field-effect transistors based on a solution-processed methanofuller-ene. Adv. Mater. 16(23-24), 2174-2179. 

Xu G, Liu F, Han S et al (2008) Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors. Appl Phys Lett 92 223114... 

Zaumseil J, Sirringhaus H (2007) Electron and ambipolar transport in organic field-effect transistors. Chem Rev 107 1296-1323... 

Cheng XY, Noh YY, Wang JP, Tello Frisch MJ, Blum RP, Vollmer A, Rabe JP, Koch N, Sirringhaus H (2009) Controlling electron and hole charge injection in ambipolar organic field-effect transistors by self-assembled monolayers. Adv Funct Mater 19 2407-2415... 

Figure 17.1 Sketch for the unipolar and ambipolar operation regimes of an organic field-effect transistor.

Figure 17.4 Output and transfer characteristics of ambipolar field-effect transistors for a mixing ratio between Ceo and CuPc of 1 1 measured in the n-channel regime (a, c) as well as the p-channel regime (b, d). The substrate was 02-plasma treated and the film evaporated at 375 K substrate temperature. The direction of the hysteresis is indicated by arrows. (Figure adopted from Ref. [27].)...

Yasuda, T., and Tsutsui, T., Organic field-effect transistors based on high electron and ambipolar carrier transport properties of copper-phthalocyanine, Chem. Phys. Lett., 402, 395, 2005. 

Meijer, E. J. et ah. Solution-processed ambipolar organic field-effect transistors and inverters, Nat. Mater., 2, 678, 2003. 

Takahashi, T. et al., Ambipolar organic field-effect transistors based on rubrene single crystals, AppZ. Phys. Lett., 88, 033505, 2006. 

Shkunov, M., Simms, R., Heeney, M., Tierney, S. and McCulloch, I., Ambipolar field-effect transistors based on solution-processable blends of thieno 2,3-b thiophene terthiophene polymer and methanofullerenes, Adv. Mater, 17, 2608, 2005. 

Kunugi, Y, Takimiya, K., Negishi, N., Otsubo, T. and Aso, Y, An ambipolar organic field-effect transistor using oligothiophene incorporated with two 60 fullerenes, J. Mater. Chem., 14, 2840-2841, 2004. 

Rost, C., Karg, S., Riess, W., Loi, M.A., Murgia, M. and Muccini, M., Light-emitting ambipolar organic heterostructure field-effect transistor, Syn. Met., 146, 237-241, 2004. 

Swensen, J.S., Soci, C. and Heeger, A.J., Light emission from an ambipolar semiconducting polymer field-effect transistor, Appl. Phys. Lett, 87, 253511, 2005. 

Th B. Singh, S. Gunes, N. Marjanovic, N. S. Sariciftci, and R. Menon. Correlation between morphology and ambipolar transport in organic field-effect transistors. Journal of Applied Physics, 97(ll) 114508-5, 2005. 

The group of Meijer and Schenning has constructed ambipolar field-efifect transistors from imides-diaminotriazines H-bonded p-n dyad complexes 29 based on OPV4T in combination with PBI-2 [89]. The transistors show two independent pathways for charge transport. In contrast, processing of OPV and PBl that are not connected by H-bonds formed charge transfer donor-acceptor complexes. They showed no mobility in field-effect transistors, presumably due to an unfavorable supramolecular organization. 

T. Lei, J.-H. Dou, X.-Y. Cao, J.-Y. Wang, J. Pei, A BDOPV-Based Donor-Acceptor Polymer for High-Performance N-Type and Oxygen-Doped Ambipolar Field-Effect Transistors. Adv. Mater. 2013,25, 6589-6593. 

L. Biirgi, M. Turbiez, R. Pfeiffer, E Bienewald, H.-J. Kirner, C. Winnewisser, High-Mobility Ambipolar Near-Infrared Light-Emitting Polymer Field-Effect Transistors. Adv. Mater. 2008,20, 2217-2224. 

An ambipolar charge transport was observed in transistors based on HD-PPTV. In contrast, only a hole transport mechanism was observed in HD-PPPV. Field-effect transistors that were fabricated from HD-PPTV showed hole and electron mobilities of 0.2 and 0.03 cm V s Integration of the ambipolar HD-PPTV transistors into complementary inverters showed sharp switching characteristics with voltage gains up to 27. 

The first demonstration of a polymer blend transistor with appreciable ambipolar mobUities was accomplished by Meijer et al. by blending poly(2-methoxy-5-(3,7-dimethyloctoxy)- p-phenylene vinylene) (OCiCio-PPV) and PCBM (Figure 16.12a) [13]. Here, the hole and electron mobilities reached 7 x 10 cm (V s ) and 3 x 10 cm (V s ), respectively. A representation of the interpenetrating network and cross-section of the field-effect transistor is presented in Figure 16.12a. For both materials the charge injection comes from... 

C. Rost, S. Karg, W. Riess, M. A. Loi, M. Murgia and M. Muccini, Ambipolar light-emitting organic field-effect transistor, AppZ. Phys. Lett., 85, 1613-1615 (2004). 

K. Yamane, H. Yanagi, A. Sawamoto and S. Hotta, Ambipolar organic light emitting field effect transistors with modified asymmetric electrodes, Appl. Phys. Lett., 90, 162108 (2007). 

T. Sakanoue, M. Yahiro, C. Adachi, H. Uchiuzou, T. Takahashi and A. Toshimitsu, Ambipolar light-emitting organic field-effect transistors using a wide-band-gap blue-emitting small molecule, Appl. Phys. Lett, 90, 171118 (2007). 

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