Lithography - electron beam

Lithography. Electron beam exposures were carried out with an IBM vector scan e-beam exposure tool at 20 keV. X-ray exposures were carried out under vacuum by Al-Ka radiation, and UV exposures with a Cannon PLA 500, Oriel illuminator, Hybrid Technology Group Model 345-10, or Optical Associates Inc. Model 780 in contact... 

Dip-pen lithography, SAM, hot embossing, nanoimprint lithography, electron beam lithography, dry etching, and reactive ion etching are techniques that can be used to prepare nanostructures with 50-70 nm dimensions. Nanomechanical techniques include processes that involve local transfer of material from a tool onto a substrate when either the tool or the substrate is prestructured. 

Marrian C R K, Perkins F K, Brandow S L, Koloski T S, Dobisz E A and Calvert J M 1994 Low voltage electron beam lithography in self-assembled ultrathin films with the scanning tunneling microscope Appi. Rhys. Lett. 64 390... 

First planar integrated circuits fabricated r Electron beam lithography demonstrated Dry film laminate resist introduced... 

Electronics Production of circuit boards (producing contacts in boreholes), modified electrolytic condensers, modified field effect transistors, molecular electronics (unidirectional conductors), photostructural lacquers based on ICPs (electron beam lithography), novel photoluminescent diodes (LED), data storage (e.g. spatially resolved eleclrochromics)... 

Langer et al. [10] measured also electrical resistance of individual MWCNTs at very low temperatures and in the presence of a transverse magnetic field. As for the case of the microbundle, the CNTs were synthesised using the standard carbon arc-discharge technique. Electrical gold contacts have been attached to the CNTs via local electron beam lithography with an STM. The measured individual MWCNT had a diameter of about 20 nm and a total length of the order of 1 im. 

Preliminary experiments with electron-beam writing and ion-beam projection lithography have demonstrated that the S-layer may also be patterned by these techniques in the sub-lOO-nm range (nnpnblished resnlts). The combination of ion-beam projection lithography and S-layers as resist might become important in the near fntnre, since ion beams allow the transfer of smaller featnres into S-layer lattices compared to optical lithography. 

Includes Pattern generator, photo-repeater, electron-beam lithography and contact printer... 

On detailed electrical characteristics of a SET transistor utilizing charging effects on metal nanoclusters were reported by Sato et al. [26]. A self-assembled chain of colloidal gold nanoparticles was connected to metal electrodes, which were formed by electron-beam lithography. The cross-linking of the particles as well as their connection to the electrodes results from a linkage by bifunctional organic molecules, which present the tunnel barriers. 

A similar route has been followed most recently by Weiss et al. who have fabricated a multi-island SE device from self-assembled ID gold nanocrystal chains [28]. They assembled thiol-stabilized 50 nm Au particles in a chainlike structure and used subsequently electron-beam lithography for electrode fabrication. Here it has to be... 

On the way to more reliability in device fabrication, Kronholz et al. reported on the reproducible fabrication of protected metal nanoelectrodes on silicon chips with <30nm gap width and their electrochemical characterization [33]. For the fabrication of the chips, an optical lithography step and two electron-beam steps are combined (Figure 18). 

As a consequence one might expect that the future needs to rely on hybrid elements which arise from advanced UV-and electron-beam lithography, from imprint techniques or automated and parallelized nanomanipulation techniques, like dip-pen lithography or focused ion-beam techniques in combination with supramolecular approaches for the assembly of molecular inorganic/organic hybrid system. Nevertheless, it is evident for any kind of chemical approach that falling back onto the present-day... 

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