Organic field-effect transistors drain current

Figure 7. (a) Measured current-voltage characteristics of organic field-effect transistors under ambient conditions and after exposure to vapors of various organic solvents, (b) Measured differential response of organic field-effect transistors after exposure to the same organic solvents. THF is tetrahydrofuran. Iqs/s the drain-source current, and Vos is the drain-source voltage. 

Abstract. Pentacene organic field effect transistors (OFETs) electrical and structural properties have already been analysed from the point of view of different gate dielectric and growth conditions utilization. The AFM and micro Raman investigations show that the first organic monolayer at the pentacene/dielectric interface are essential determinants of carrier transport phenomena and achievable drain current of pentacene OFETs. 

Fig. 12.13 An organic thin-film field-effect transistor, schematic. The current Id in a weakly semiconducting organic film (black) between two electrodes S (source) and D (drain) can be controlled by the gate (G) voltage Vc- The latter influences charge carriers capacitively in a thin layer of the...

The DC characteristics of the organic transistors were measured in air prior to the application of the rnbber pressnre sensor lihn. The field-effect mobility is 1.4 cmWs in the saturation regime. The on/off ratio is 10 if the off current is defined as the minimum drain current at Vqs = h-40 V, while it is 10 if the off current is measured at Vqs = 0 V. The mobility of the present device is comparable to or slighdy larger than that of amorphous silicon ( 1.0 cmWs). 

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