Dielectric material-gate field effect transistor

Dielectric material-gate field effect transistor... 

The other interesting material for electronics is carbon nanotubes. We have shown the application of individual single-walled carbon nanotubes for field effect transistors (FETs) [3]. Carbon nanotubes (CNT) or CNT bundles can be placed between two carbon electrodes playing the role of source and drain. The gate electrode can be made of thin metal stripe under the dielectric film in the region between source and drain. 

As already mentioned, one possible way to eliminate the fundamental limitations of current field effect transistors would be to substitute the sihca by other high dielectric function oxides as gate materials. Unfortunately, the growth of high-quality oxide films on siUcon substrates is not a simple task, and much work is being devoted to develop appropriate methods. For example, it has been shown that the formation of thin films of alkaline-earth-met-... 

The metal oxide-semiconductor field effect transistor (MOSFET) is the most important component in modem electronics, at least from the perspective of sheer numbers. A typical computer chip contains vast numbers of MOS-FETs. The basic architecture is illustrated in Eigure 1. The semiconductor is connected to a substrate on one side and to a gate contact on the other, which is separated from the semiconductor by a dielectric film. The region of semiconductor directly beneath the gate connects two contacts, the source and the drain. If the semiconductor is p-type Si, then source and drain contacts may be formed by implantation of electron-rich elements to yield shallow regions composed of n-type material. As the potential difference between the gate and the substrate is increased, the channel between the... 

In 2005, Philips, which invests around 10% of its sales income on research and development, claimed a new research breakthrough with a polymer-based memory which is non-volatile, that is to say it will not lose data when the power supply is switched off. The technology involves the use of a field-effect transistor in which the gate dielectric is composed of a polymer ferro-electric material. Applications include the ability to make low-cost radio-frequency identification tags (RFID), a product which is being widely introduced into logistics and retail businesses with reported world production estimates of some 1.3 billion tags in 2005. 

In addition, however, the device layouts of the employed OFETs are identical and differ simply by the selective UV treatment of the PMMA gate dielectric. This simplifies the manufacturing of logic elements and thus reduces the production cost, being an advantage if compared to inverters were field-effect transistors with different functional materials have been employed. 

Chapter 10- The continuous improvement of integrated circuit performance is achieved by reducing the dimensions of the key component of these circuits the MOSFET (metal-oxide-semiconductor field effect transistor). One of the key elements that allowed the successful scaling of silicon based MOSFET is certainly the excellent material and electrical properties of the gate dielectric so far used in these devices Si02. However, further scaling of... 

Today, electronics are manufactured with expensive materials that often contribute to the increase of pollution and are rarely recyclable. The market of printed electronic is expanding rapidly and therefore needs new materials that could help revolutionize the electronic industry and would be relative inexpensive. Nanocellulose, one of the most common, cheapest, and reqrclable substrate materials, is believed to be able to successfully replace plastic, metallic foil or paper substrates currently used for manufacturing flexible electronics [81, 82]. The authors of article [81] studied composites made of inoi anic filler particles and cellulose nanofibers for printed electronics applications. In their research, nanocellulose was assumed to fill voids of the structure. On the other hand, Caspar et al. worked on "nanocrystalline cellulose applied simultaneously as the gate dielectric and the substrate in flexible field effect transistors [82]. Figure 21.42 presents transmittance of two NCC membranes produced by two approaches NCC evaporation and NCC casting. 

The first dielectric material that was used on open gates of field effect transistors (ion-sensitive field effect transistor, ISFET) was silicon dioxide by Bergveld in 1970. The problem in the ISFET structure is the poor insulation between the device and the solutions. The ISFET structure was improved by using ion-sensitive electrodes (ISE). With field effect transistors the gate area can be extended by using a conductive wire covered with the sensitive membrane. This new approach helps in enhancing the stability, sensitivity, and flexibility in shaping i.e., miniaturization of pH-sensitive devices. 

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