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Organic field-effect transistor shift

Rashid, and G. Schitter, Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator , Journal of Applied Physics 96, 6431 (2004). [Pg.421]

Bias stress effect resulting in long term instability has been of the biggest concerns in the field of organic transistors. Even with improved processing and passivation of active layer, organic devices exhibit shift in threshold voltages and consequent reduction in current due to this effect. The exact reason for the bias stress is still... [Pg.108]


See other pages where Organic field-effect transistor shift is mentioned: [Pg.271]    [Pg.105]    [Pg.247]    [Pg.67]    [Pg.365]    [Pg.425]    [Pg.295]    [Pg.222]    [Pg.3903]    [Pg.6138]    [Pg.130]    [Pg.156]    [Pg.395]    [Pg.395]   
See also in sourсe #XX -- [ Pg.59 ]




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