Metal oxide silicon field-effect transistors

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...

Metal oxide silicon field effect transistor (MOSFET) Surface acoustic wave Optical sensors... 

Currently, three basic high-frequency power amplifiers are in use the parallel connection of a bank of bipolar power transistors, the hybrid connection of parallel bipolar power transistors cascaded with metal oxide silicon field effect transistors (MOSFETs), and the bridge connection of MOSFETs. Each has unique properties and represents a stage in the evolution of ESUs. 

MOSFET metal-oxide silicon field effect transistor... 

The metal oxide silicon field effect transistor (MOSFET) has the basic structure as shown schematically in Figure 10.1 (an n-channel device is shown and will be discussed, although p-channel devices work equally well). The device consists of two n-type diffusions (called the source and the drain) in a p-type substrate separated by a p-type area. This area is covered by a thin (50 nm) insulator layer (generally silicon dioxide or silicon dioxide overlaid with silicon nitride) which is called the gate insulator. On top of the gate insulator there is a metallic contact called the gate electrode, which in conventional devices is made from aluminium. The source and drain diffusions are... 

Metal oxide semiconductor field-effect transistors (MOSFETs) are field effect transistors with a thin film of silicon dioxide between the gate electrode and the semiconductor. The charge on the silicon dioxide controls the size of the depletion zone in the polype semiconductor. MOSFETs are easier to mass produce and are used in integrated circuits and microprocessors for computers and in amplifiers for cassette players. Traditionally, transistors have been silicon based but a recent development is field-effect transistors based on organic materials. 

Also organic compound like metal phthalocya-nines [xxvi] and electronic conducting polymers [xxvii] are used as gas-sensitive layers in resistive sensors, POSFETs (polymer oxide silicon field-effect transistors), heterojunction diodes (e.g., polyrrole on... 

Nevertheless, the first functional working TFT was demonstrated by Weimer in 1962 (Ref 2). He used thin films of polycrystalline cadmium sulfide, similar to those ones developed for photodetectors. The simplified structure is shown in Fig. 1(b). Other TFT semiconductor materials like CdSe, Te, InSb and Ge were investigated, but in the mid-1960 s the emergence of the metal oxide semiconductor field effect transistor (MOSFET) based on the crystalline silicon technology and the possibility to perform integrated circuits, led to a decline in TFT development activity by the end of the 1960s. 

In Figure 5-la is shown a schematic representation of a silicon MOSFET (metal-oxide-semiconductor field effect transistor). The MOSFET is the basic component of silicon-CMOS (complimentary metal-oxide-semiconductor) circuits which, in turn, form the basis for logic circuits, such as those used in the CPU (central processing unit) of a modern personal computer [5]. It can be seen that the MOSFET is isolated from adjacent devices by a reverse-biased junction (p -channel stop) and a thick oxide layer. The gate, source and drain contact are electrically isolated from each other by a thin insulating oxide. A similar scheme is used for the isolation of the collector from both the base and the emitter in bipolar transistor devices [6],... 

There is much interest in the application of PVDF in medical imaging because of its close acoustic impedance match with both tissues. Monolithic silicon-PVDF devices have been produced in which a sheet of PVDF is bonded to a silicon wafer containing an array of metal oxide semiconductor field effect transistor (MOSFET) amplifiers arranged in such a way that when an acoustic wave is detected, the electrical signal resulting from the piezoelectric action in the PVDF appears directly on the gate of an MOS transistor. The device is therefore known as a piezoelectric oxide semiconductor field effect transistor (POSFET). 

Dielectrophoresis was used for assembly of 15 pm by 2 pm size, three-terminal silicon metal oxide semiconductor field-effect transistors between electrodes as illustrated in Fig. 6 [12]. 

---