Organic field-effect transistors drain

Hamadani BH, Richter CA, Gundlach DJ, Kline RJ, McCulloch I, Heeney M (2007) Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors. J Appl Phys 102 044503... 

Figure 2. (a) Schematic cross section of an organic field-effect transistor (OFET). (b) Schematic cross section of an organic electrochemical transistor (OECT). The applied source-drain voltage Vd and gate voltage Vg are also shown. 

Figure 7. (a) Measured current-voltage characteristics of organic field-effect transistors under ambient conditions and after exposure to vapors of various organic solvents, (b) Measured differential response of organic field-effect transistors after exposure to the same organic solvents. THF is tetrahydrofuran. Iqs/s the drain-source current, and Vos is the drain-source voltage. 

Figure 18.1 Organic field effect transistor with bottom gate and bottom drain and source contacts.

DCNDBQT organic field effect transistors (OFETs) were fabricated on a highly doped n-Si wafer with 30 nm silicon dioxide. Firstly, the silicon surface was rinsed with Dl-water, acetone and iso-propanol in order to remove small particles and organic impurities. Secondly, the substrate was treated with oxygen plasma and silanised for 26 hours at 60 °C by hexamethyldisilazane (HMDS) in order to improve the OFET performance [21]. As source-drain contacts of the bottom contact transistors (BOC) gold was used, which was evaporated through a shadow mask on the silieon dioxide (see Figure 5.2). 

Abstract. Pentacene organic field effect transistors (OFETs) electrical and structural properties have already been analysed from the point of view of different gate dielectric and growth conditions utilization. The AFM and micro Raman investigations show that the first organic monolayer at the pentacene/dielectric interface are essential determinants of carrier transport phenomena and achievable drain current of pentacene OFETs. 

Zielke, D. et al., Polymer-based organic field-effect transistor using offset printed source/drain structures, A/)/)/. Phys. Lett. 87 (12), 123508, 2005. 

Some applications for conducting polymers (like source, drain, gate, and coimector in organic field effect transistors, [transparent] electrode or raw material for highly conducting paints and lacquers with... 

Figure 8.1 Schematic representation of an due to the gate voltage, Vg. The drain voltage, organic field-effect transistor with typical Vj, is then used to extract charges from the...

The conducting channel where charges are driven from source to drain consists of a very thin layer close to the insulator-semiconductor interface. Accordingly, charge transport there is highly dependent on the quality of this interface. In that respect, the choice of the dielectric is at least as important as that of the semiconductor. More details on the issues linked to the dielectric in organic field-effect transistors can be found in recent reviews [25-27]. 

Organic field-effect transistors are three terminal devices that have the capability to modulate the conductance between the metallic source and drain terminal by changing the potential of a third metal terminal, the gate. The layout of a typical field-effect transistor is depicted in Fig. la. The organic semiconductor which... 

To operate an organic field effect transistor at low bias it is necessary to avoid large contact resistance within the source-drain circuit. ... 

Zielke D, Hubler AC, Hahn U, Brandt N, Beutzsch M (2005) Polymer-based organic field-effect transistor using off-set printed source-drain structures. Appl Phys Lett 87 123508... 

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