Field-effect transistor gate voltage

Panzer, M.J. and Frisbie, C.D. (2007) Polymer electrolyte-gated organic field-effect transistors low-voltage, high-current switches for organic electronics and testbeds for probing... 

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...

The operation principle of these TFTs is identical to that of the metal-oxide-semiconductor field-effect transistor (MOSFET) [617,618]. When a positive voltage Vg Is applied to the gate, electrons are accumulated in the a-Si H. At small voltages these electrons will be localized in the deep states of the a-Si H. The conduction and valence bands at the SiN.v-a-Si H interface bend down, and the Fermi level shifts upward. Above a certain threshold voltage Vth a constant proportion of the electrons will be mobile, and the conductivity is increased linearly with Vg - Vih. As a result the transistor switches on. and a current flows from source to drain. The source-drain current /so can be expressed as [619]... 

Sanghyun, J. Lee, K. Janes, D. B. Yoon, M-H. Facchetti, A. Marks, T. J. 2005. Low operating voltage ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics. Nano Lett. 5 2281-2286. 

Fig. 4.8. Ion-selective field-effect transistor (ISFET). Vg denotes the gate voltage.

At present, modern power components such as GTO (Gated Transistor On/Off device), IGBT (Isolated Gate Bipolar Transistor), Power Mosfet (Metal Oxide Field Effect Transistor), and high voltage capacitors are easily commercially available and perfectly adequate to realize the energy storage... 

Fig. 38. Hall resistance Rnall of an insulated gate (ln.Mn)As field-effect transistor at 22.5 K as a function of the magnetic field for three different gate voltages. /tnaii s proportional to the magnetization of the (In.Mn)As channel. Upper right inset shows the temperature dependence of / Hall- Let inset shows schematically the gate voltage control of the hole concentration and the conesponding change of the magnetic phase (Ohno et al. 2000).

The base of the field effect transistor in Figure 15-28 is constructed of p-Si with two n-type regions called source and drain. An insulating surface layer of Si02 is overcoated by a conductive metal gate between source and drain. The source and the base are held at the same electric potential. When a voltage is applied between source and drain (Figure 15-28a), little current flows because the drain-base interface is a /injunction in reverse bias. 

Rashid, and G. Schitter, Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator , Journal of Applied Physics 96, 6431 (2004). 

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