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Field-effect transistor channel material

Kagan, C. R. Mitzi, D. B. Dimitrakopoulos, C. D. 1999. Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors. Science 286 945-947. [Pg.402]

Fig. 9. A Schottky barrier gate used in the metal-semiconductor field-effect transistor (MESFET) in AT T gallium arsenide microchips. The tiny gate is only one micrometer wide (1/25,400 inch). The gate electrode is deposited before the ion-implantation process so that the gate material will shade the channel under it from the ion rain that doses the exposed material. (AT T Technology)... Fig. 9. A Schottky barrier gate used in the metal-semiconductor field-effect transistor (MESFET) in AT T gallium arsenide microchips. The tiny gate is only one micrometer wide (1/25,400 inch). The gate electrode is deposited before the ion-implantation process so that the gate material will shade the channel under it from the ion rain that doses the exposed material. (AT T Technology)...
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See also in sourсe #XX -- [ Pg.509 ]



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Field-effect transistor

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