Field-effect transistor drain electrode

Some applications for conducting polymers (like source, drain, gate, and coimector in organic field effect transistors, [transparent] electrode or raw material for highly conducting paints and lacquers with... 

Fig. 5.37 An ion-selective field-effect transistor (ISFET). 1, drain 2, source 3, substrate 4, insulator 5, metal lead 6, reference electrode 7, solution 8, membrane 9, encapsulant [22b].

Figure 15-29 Operation of a chemicalsensing field effect transistor. The transistor is coated with an insulating Si02 layer and a second layer of Si3N4 (silicon nitride), which is impervious to ions and improves electrical stability. The circuit at the lower left adjusts the potential difference between the reference electrode and the source in response to changes in the analyte solution such that a constant drain-source current is maintained.

A plurality of thin film field effect transistors 11 are deposited onto a substrate 12. Each of the transistors has a source electrode 13, a drain electrode 14 and a gate electrode 15. Source lines 17 link the source electrodes in each row of the transistors and drain lines 18 link the drain electrodes in each column of the transistors. The source lines and drain lines are electrically isolated by a planarization layer 19. A mercury cadmium telluride layer 20 is deposited onto the planarization layer followed by a top electrode layer 23. The gate electrodes are connected with the mercury cadmium telluride layer by connectors 21. A cross-section of the imager is shown below. 

Fig. 2.19. (a) Scheme of a transparent field effect transistor based on ZnO [191]. The gate electrode consists of tin-doped indium oxide (ITO) and the gate dielectric is a multilayer of AECE/TiCE (ATO). (b) Output characteristics (drain-source current as a function of the drain-source voltage) for different gate voltages. The saturation current is about 530 rA at a gate bias of 40 V. From this output characteristics a threshold voltage of 19 V and a field-effect mobility of 27 cm2 V-1 s-1 were calculated [192]... 

Both bipolar junction transistors (BJTs) and field-effect transistors (FETs) are charge-control devices [15]. The functions of the emitter, base, and collector electrodes of the BJT are replaced by the source, drain, and gate... 

Ion-sensitive field effect transistor (ISFET) — In a semiconductor device based on the principle of the field effect transistor (FET) the current between two - semiconductor electrodes (designated source and drain) is controlled by a third electrode, the gate. In an ISFET this gate is modified on its surface in a way which makes the surface ion-responsive (-selective and -sensitive). Changes in the concentration of the species in the solution in contact with the gate surface thus control the current between source and drain. In order to establish proper working conditions a reference electrode (e.g., a -+ REFET) is needed. See also - CHEM-FET. 

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