Field-effect transistors device architectures

As a low-cost alternative to traditional inorganic semiconductors based transistors, organic field effect transistors are ideally positioned for applications such as radio frequency ID tags, sensors, and smart banknotes [36-40]. An archetypical structure of a bottom-gate top-contact OFET is shown in Scheme 3.7a. Other device architectures have also been employed depending on the relative... 

The problems of rms addressing of liquid crystal devices can be circumvented by incorporating a semiconductor switch at each pixel of the display. The most usual architecture uses a field effect transistor as the switch [69], while other active components such as diode networks [70] and MIM (metal-insulator-metal) switches [71] have also been used (Fig. 18). The semiconductor material is usually amorphous silicon, which can be deposited and processed at temperatures compatible with a glass substrate. Polycrystalline silicon and other semiconductors, especially cadmium selenide, are also used in special applications such as those requiring very small pixel geometries and, by virtue of their higher carrier mobility, offer the... 

A field-effect transistor (FET) is a three terminal device, equipped with three electrodes named source, drain and gate. The device architecture mostly used with organic semiconductors is the thin film FET (TFT), which is schematized in Fig. 13. 

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