Field-Effect-Transistor Fabrication

Ridley, B. A. Nivi, B. Jacobson, J. M. 1999. All-inorganic field effect transistors fabricated by printing. Science 286 746-749. 

Cui, T. Liang, G. Varahramyan, K. 2003. An organic poly(3,4-ethylenedioxythio-phene) field-effect transistor fabricated by spin coating and reactive ion etching. IEEE Trans. Electron Dev. 50 1419-1422. 

Kubovic, M. Aleksov, A. Schreck, M. Bauer, Th. Stritzker, B. Kohn, E. Field effect transistor fabricated on hydrogen-terminated diamond grown on SrTiOs substrate and iridium buffer layer. Diamond Relat. Mater. 2003, 12, 403-407. 

Guo, L.J. Krauss, P.R. Chou, S.Y. Nanoscale silicon field effect transistors fabricated using imprint lithography. Appl. Phys. Lett. 1997, 71 (13), 1881-1883. 

Parashkov, R. et al.. Flexible all-organic field effect transistors fabricated by electrode peehng transfer, Jpn. J. Appl. Phys. 43, L130-132, 2004. 

Wang, J.Z. et al.. Polymer field effect transistors fabricated by dewetting, Synth. Met. 146, 287-290, 2004. 

Z. Wang et al., Metal transfer printing and its application in organic field-effect transistor fabrication, Adv. Mater, 15, 1009, 2003. 

Figure 16. Schottky gated poly(3-alkylthiophene) field-effect transistors fabricated by Yoshino et al. [85].

Y. Liu, K. Varahramyan, and T. Cui. 2005. Low-voltage aU-p>olymer field-effect transistor fabricated using an inkjet printing technique. Macromol Rapid Commun 26 1955-1959. 

The CBD CdS was also applied in other areas of device fabrication and application. Mereu et al.32 fabricated thin-film field-effect transistors using CBD CdS on Si02/Si (n-type) substrates. Meth et al.33 fabricated thin-film transistors (TFTs) that incorporated patterned CBD cadmium sulfide as the active layer. Mobility in the =1 -cm2/Vs range with on/off ratios of =105 are needed for practical TFTs (e.g., for displays). Mobility values of 0.1 -1 cm2/Vs with on/off ratios exceeding 107 have been reported for these types of TFTs using CBD CdS. 

Ohmori, Y. Takahashi, H. Muro, K. Uchida, M. Kawai, T. Yoshino, K. 1991. Fabrication and characteristics of Schottky gated poly(3-alkylthiophene) field effect transistors. Jpn. J. Appl. Phys. 30 L610-L611. 

Dimitrakopoulos, C. D. Afzali-Ardakani, A. Furman, B. Kymissis, J. Purushothaman, S. 1997. Trans-trans-2,5-bis-[2- 5-(2,2 -bithienyl) ethenyl] thiophene Synthesis, characterization, thin film deposition and fabrication of organic field-effect transistors. Synth. Met. 89 193-197. 

Low-cost, disposable, Si02/Si3N4 chemical field effect transistor (ChemFET) microsensors have been fabricated for pH measurements and adapted to biochemical applications by using polyvinyl alcohol (PVA) enzymatic layers deposited and patterned... 

---