Field-effect transistors structure

As aheady mentioned above, in the present book the results obtained during six years of research within the framework of a national focus program entitled Organic field effect transistors Structural and dynamic characteristics are presented. We have augmented the book with two contributions fi om compa-... 

Aleshin, A. N. et al.. Mobility studies of field-effect transistor structures based on anthracene single crystals, Appl. Phys. Lett., 84, 5383, 2004. 

Figure 10.50 Schematic of the nanofiber field effect transistor structure. (Reprinted with permission from Applied Physics Letters, Single electrospun regioregular poly(3-hexylthio-phene) nanofiber field-effect transistor by H. Liu, C. H. Reccius and H. G. Craighead, 87, 25. Copyright (2005) American Institute of Physics)...

Use of a doped metallic polymer as the active chaimel in a field effect transistor structure results in unexpected normally on transistor-like behavior. The importance was shown for ion migration... 

Regardless of the patterning technique employed, many electronic devices place requirements on the placement (registration) and size of the areas patterned. For example, a multiple layer field-effect transistor structure that could be patterned via printing is shown in Figure 4.5. 

Fig. 29 a Top contact and b bottom contact field-effect transistor structures for determination of charge-transport properties of organic semiconductors, c Typical output characteristics and d transfer characteristics of an organic field-effect transistor with Spiro-TAD 61 as active material (measurements by T.P.l. Saragi)... 

Figure 5 (a) Schematic organic field-effect transistor structure, (b) jr-stacking fluorinated perylene dicarboximide, (c) donor-acceptor... 

Kao, C.., Kwon, Yong Wook, Heo, Y.W., Norton, D.P., Pearton, S.., Ren, F. and Chi, G.C. (2005) Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition. Journal of Vacuum Science SI Technology B, 23, 1024. 

The invention of the germanium transistor in 1947 [I, 2] marked the birth of modem microelectronics, a revolution that has profoundly influenced our current way of life. This early device was actually a bipolar transistor, a structure that is mainly used nowadays in amplifiers. However, logical circuits, and particularly microprocessors, preferentially use field-effect transistors (FETs), the concept of which was first proposed by Lilicnficld in 1930 [3], but was not used as a practical application until 1960 [4]. In a FET, the current flowing between two electrodes is controlled by the voltage applied to a third electrode. This operating mode recalls that of the vacuum triode, which was the building block of earlier radio and TV sets, and of the first electronic computers. 

Although astronomy is accustomed to the detection of a few photons per pixel, the electric charge of a few electrons is extremely small. A critical part of the design of a focal plane array is the amplifier which converts the small amount of charge in each pixel into a signal that can be transmitted off the detector. The amplifier in an optical or infrared detectors is typically a field effect transistor (FET), a solid state structure which allows a very small amount... 

The silver(I) complexes with the tetrakis(methylthio)tetrathiafulvalene ligand have been reported, the nitrate salt presents a 3D structure with an unprecedented 4.16-net porous inorganic layer of silver nitrate,1160 the triflate salt presents a two interwoven polymeric chain structure.1161 The latter behaves as a semiconductor when doped with iodine. With a similar ligand, 2,5-bis-(5,5,-bis(methylthio)-l,3,-dithiol-2 -ylidene)-l,3,4,6-tetrathiapentalene, a 3D supramolecular network is constructed via coordination bonds and S"-S contacts. The iodine-doped compound is highly conductive.1162 (Methylthio)methyl-substituted calix[4]arenes have been used as silver-selective chemically modified field effect transistors and as potential extractants for Ag1.1163,1164... 

Maehashi et al. (2007) used pyrene adsorption to make carbon nanotubes labeled with DNA aptamers and incorporated them into a field effect transistor constructed to produce a label-free biosensor. The biosensor could measure the concentration of IgE in samples down to 250 pM, as the antibody molecules bound to the aptamers on the nanotubes. Felekis and Tagmatarchis (2005) used a positively charged pyrene compound to prepare water-soluble SWNTs and then electrostatically adsorb porphyrin rings to study electron transfer interactions. Pyrene derivatives also have been used successfully to add a chromophore to carbon nanotubes using covalent coupling to an oxidized SWNT (Alvaro et al., 2004). In this case, the pyrene ring structure was not used to adsorb directly to the nanotube surface, but a side-chain functional group was used to link it covalently to modified SWNTs. 

Short intramolecular contacts between chalcogens and other chalcogens or other heteroatoms have been shown to influence molecular geometry, particularly planarity, in many structures of electroactive materials. Hence the position of the chalcogen atom in the material can profoundly affect its properties. For example Crouch et al 2 report the X-ray crystal structure of compound 24 (Figure 10), a candidate for an organic field-effect transistor, showing the effect of intramolecular S- F close contacts (in tandem with H F contacts) on the planarity of the molecule in the solid state. Note also the... 

The measurement of changes of the surface potential Vo at the interface between an insulator and a solution is made possible by incorporating a thin film of that insulator in an electrolyte/insulator/silicon (EIS) structure. The surface potential of the silicon can be determined either by measuring the capacitance of the structure, or by fabricating a field effect transistor to measure the lateral current flow. In the latter case, the device is called an ion-sensitive field effect transistor (ISFET). Figure 1 shows a schematic representation of an ISFET structure. The first authors to suggest the application of ISFETs or EIS capacitors as a measurement tool to determine the surface potential of insulators were Schenck (15) and Cichos and Geidel (16). 

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