Organic field effect transistors OFET electrodes

When a third electrode is added to the structure shown in Fig. 8.12a, below the substrate, it creates an electric field in the insulating substrate, which is perpendicular to the path of the current between the two contacts to the selective layer. Such a structure became known as the Organic Field-Effect Transistor (OFET). It is discussed here and not in Chapter 6 because it belongs to the family of organic chemiresistors. 

M = Tb, Lu) into organic thin-film transistors by LB technique and reported their field effect mobility, which represented the first report for p-type OFETs based on bis(phthalocyaninato) rare earth complexes prepared via LB method [88], Due to the highly ordered molecular arrangement of M(Pc)[Pc(OC8Hi7)g] (M = Tb, Lu) in LB films and the appropriate HOMO energy level of these double-deckers relative to the Au source-drain electrodes, the OFETs reported in that work exhibited higher hole transfer mobility of 1.7 x 10-3 cm2 V-1 s-1 in comparison with those fabricated from monomeric phthalocyanine LB films. 

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