MOS field effect transistor

Nanocrystals are receiving significant attention for nano-electronics application for the development of future nonvolatile, high density and low power memory devices [1-3]. In nanocrystal complementary metal oxide semiconductor (CMOS) memories, an isolated semiconductor island of nanometer size is coupled to the channel of a MOS field effect transistor (MOSFET) so that the charge trapped in the island modulates the threshold voltage of the transistor (Fig. 1). 

Lilienfeld, Julius Edgar — (Apr. 18, 1881, Lemberg, Austro-Hungarian Empire, now Lviv, Ukraine - Aug. 28, 1963, Charlotte Amalie, the Virgin Islands, USA) Lilienfeld proposed the basic principle behind the MOS field-effect transistor in 1925 [i]. This was the background of all field-effect transistors used now, including - ion-selective field-effect transistors (ISFETs) used in numerous electrochemical sensors. 

The attractiveness of silicon as a semiconductor material for ICs derives in part from the feet that this important material forms a naturally insulating surface oxide. Use is made of this fact, for example, in metal-oxide-semiconductor (MOS) field-effect transistors (FET), where the oxide serves as the gate insulator. No such naturally insulating oxide occurs with any of the compound semiconductors that offer improved performance over silicon in many device apphcations. Roberts et al. (38) demonstrated the feasibiUty of such metal-insulator-semiconductor (MIS) structures as FETs and chemical sensors shown schematically in Figure 1.23. These researchers... 

Liindstrom, I. Shivaramn, S. Svenson, C. Lundkvist, L., A hydrogen-sensitive MOS field-effect transistor, Appl. Phys. Lett. 1975, 26, 55-57... 

Card, H. and Rhoderick, E., Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes ,/. Phys. DiAppl. Phys., 1971,4,1589-601. Lundstrom, I., Shivaraman, M., Svensson, C. and Lundkvist, I., A hydrogen-sensitive MOS field effect transistor ,/. AppZ. Phys. Lett., 1975,26,55-7. Lundstrom, I., Hydrogen sensitive MOS structures Part 1 Principles and applications Sensor Actual., 1981,1,403-26. 

Lundstrom, I., Shivaraman, M. S. and Svensson, C. M. (1975), A hydrogen-sensitive MOS field effect transistor. Journal of Applied Physics, 46,3876-81. 

Kreisl, E, Helwig, A., Muller, G, Obermeier, E. and Sotier, S. (2005), Detection of hydrocarbon species using silicon MOS field-effect transistors operated in a non-stationary temperature-pulse mode . Sens. Actuators B, 106,442-9. 

When very thin Si02 layers are required such as a gate oxide in an MOS-field effect transistor (MOSFET) or when an Si02 layer is required as an insulating layer between layers in a multilevel device the CVD process is used. The dielectric is an active component of the storage capacitor in dynamic RAMs, and its thickness determines the amount of charge that can be stored (see Chapter 31). 

MOSFET MOS field-effect transistor SPIPES spin-polarized inverse photoemission... 

Luna-Moreno D, Monzon-Hemandez D (2007) Effect of the Pd-Au thin film thickness uniformity on the performance of an optical fiber hydrogen sensor. Rev Appl Surf Sci 253 8615-8619 Luna-Moreno D, Monzon-Hemandez D, VUlatoro J, Badenes G (2007) Optical fiber hydrogen sensor based on core diameter mismatch and annealed Pd-Au thin films. Sens Actuators B 125 66-71 Lundstrom 1, Shivaraman MS, Svensson C, Lundkvist L (1975) A hydrogen-sensitive MOS field-effect transistor. J Appl Phys Lett 26 55-57... 

Luft W, Tsuo YS (1993) Hydrogenated amorphous sUicon aUoy deposition processes. Dekker, New York, NY Lundstrbm I (2001) SiC based field effect gas sensors for industrial appUcations. Phys Status SoUdi (a) 185(1) 15-25 Lundstrbm I, Shirvamavan MS, Svensson C (1975a) A hydrogen-sensitive MOS field-effect transistor. Appl Phys Lett... 

Lundstrom, M S Shivaraman, C M Svensson and L Lundkvist, Hydrogen sensitive MOS field effect transistor, App/ Phys Lett, 26 (1975)55-57... 

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