Field-Effect Transistors Based on Single SWCNTs

Field-Effect Transistors Based on Single SWCNTs 

The predietion that SWCNTs ean be semieondueting motivated the fabrieation of FETs eontaining individual SWCNTs as eondueting ehannel. The first de- 

A water droplet placed on the contacted tube serves as the gating medium with a thin Ag/AgCl wire functioning as the gate electrode. Hysteresis-free field- 

The seenario for a CNT-FET immersed in a liquid or eoated with an SPE is illustrated in Figiue 26.6(b), which reveals that the geometrie eapaeitanee is 

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