Organic field-effect transistors high mobility

Mas-Torrent M, Durkut M, Fladley P, Ribas X, Rovira C (2004) High mobility of dithiophene-tetrathiafulvalene single-crystal organic field effect transistors. J Am Chem Soc 126 984-985... 

Bao Z, Lovinger AJ, Dodabalapur A (1996) Organic field-effect transistors with high mobility based on copper phthalocyanine. Appl Phys Lett 69 3066... 

Payne MM, Parkin SR, Anthony JE, Kuo CC, Jackson TN (2005) Organic field-effect transistors from solution-deposited functionalized acenes with mobilities as high as 1 cm2/ V-s. J Am Chem Soc 127 4986 987... 

S. Ando, R. Murakami, J. i Nishida, H. Tada, Y. Inoue, S. Tokito, and Y. Ya-mashita. n-Type Organic Field-Effect Transistors with Very High Electron Mobility Based on Thiazole Oligomers with Trifluoromethylphenyl Groups. Journal of the American Chemical Society, 127(43) 14996-14997, 2005. 

Organic field effect transistor (OFET) devices have been fabricated from pBTTT polymer solutions and hole mobility values of up to 0.8cm /V s were reported in a nitrogen atmosphere. These values approach that of high performing evaporated small molecule devices and are comparable to amorphous silicon. In bottom gate, bottom-contact devices, in which the active semiconductor layer is the exposed top surface, the effect of different ambient conditions has been evaluated. Exposure to unpurified, ambient air in which the humidity is -50%, results in an initial increase in the off-current of the device. In filtered, low humidity air, transistor devices remain very stable over time. 

Singh TB, Maqanovic N, Matt GJ, Gunes S, Sariciftci NS, Ranul AM, Andreev A, Sitter H, Schwodiauer R, Bauer S (2005) High-mobility n-channel organic field-effect transistors based on epitaxially grown C-60 films. Org Electron 6 105... 

---