Metal oxide semiconductor field effect transistor switching circuit

In Section 2C-3 (Figure 2-19), we described the metal oxide semiconductor field-effect transistor (MOSFET), which is widely used in computers and other electronic circuits as a switch to control current in circuits. One of the problems in using this type of device in electronic circuits has been its pronounced sensitivity to ionic surface impurities, and a great deal of money and effort has been expended by the electronics industry in minimizing or eliminating this sensitivity to produce stable transistors. 

For driving matrix liquid crystal display panels, the silicon metal-oxide semiconductor field effect transistor (MOSFET) fabricated on a silicon monolithic wafer has been investigated by several groups [134-150]. The MOS transistor circuit fabrication techniques are well developed and have been used to produce various LSI devices. A dynamic scattering mode, a planar type GH mode or a polymer dispersed (PD) mode are used in these displays because the silicon wafer is intrinsically opaque. The circuit configuration of the panel is essentially the same as that of the p-Si TFT switch matrix addressed liquid crystal display panel as shown its equivalent circuit in Fig. 18(a). 

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