Field effect transistor, addressing

P. G. LeComber and W. E. Spear, The Development of the a-Si H Field-Effect Transistor and Its Possible Applications D. G. Ast, a-Si H FET-Addressed LCD Panel S. Kaneko, Solid-State Image Sensor M. Matsumura, Charge-Coupled Devices M. A. Bosch, Optical Recording A. D Amico and G. Fortmato, Ambient Sensors H. Kukimoto, Amorphous Light-Emitting Devices R. J. Phelan, Jr., Fast Detectors and Modulators J. I. Pankove, Hybrid Structures... 

The last volume of this miniseries, 21, Part D, covers device applications, including solar cells, electrophotography, image pickup tubes, field effect transistors (FETs) and FET-addressed liquid crystal display panels, solid state image sensors, charge-coupled devices, optical recording, visible light... 

One of the easiest ways to visualize the material and device characteristics that need to be measured is to consider a semiconductor device. For this I have chosen in Figure 1 a metal-oxide-semiconductor field-effect transistor (MOSFET) as representative of a typical semiconductor device. Indicated on it are the important material and device parameters that need to be measured. Only some of them are addressed in this chapter. Other devices could have been chosen, but the MOSFET incorporates most ot the parameters of interest and is the most coismon integrated circuit device. 

The first section of the book is devoted to industrial applications. In two articles written by two of the major companies active in this field, PolylC and Evonik, the applications that presently attract the most interest fi om a commercial point of view are described. At the same time, the key problems related to the manufacturing of cheap electronics through a printing process are addressed. These two chapters provide an excellent introduction to the more applied aspects of the field and also define the Ifamework for the following chapters in the book, which all address problems that in one way or the other are related to producing organic field effect transistors and to improving their performance and stability. 

Accordingly, in this contribution we will address the transport properties of selected materials, tetracene, diindeno[l,2,3-cd l, 2, 3 -lm]perylene (DIP), etc. (see Figure 25.1), which show different chemical stabilities and susceptibilities on (photo-)oxidation due to their respective aromaticity [11]. The temperature dependent charge carrier mobility proves to be an indicator of high sensitivity for chemical and structural irregularities and can be accessed by injection-free Time-Of-Flight (TOF) and injection-based Field-Effect Transistor (FET) and Space-Charge-Limited-Current (SCLC) studies. 

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