Field-effect transistor gate electrode

Some applications for conducting polymers (like source, drain, gate, and coimector in organic field effect transistors, [transparent] electrode or raw material for highly conducting paints and lacquers with... 

Electron tunnelling tlirough monolayers of long-chain carboxylic acids is one aspect of interest since it was assumed tliat such films could be used as gate electrodes in field-effect transistors or even in devices depending on electron tunnelling [24, 26, 35, 36, 37 and 38]- It was found, however, tliat tlie whole subject depends critically on... 

The ISFET is an electrochemical sensor based on a modification of the metal oxide semiconductor field effect transistor (MOSFET). The metal gate of the MOSFET is replaced by a reference electrode and the gate insulator is exposed to the analyte solution or is coated with an ion-selective membrane as illustrated in Fig. 

AFID = alkali-flame ionization detection FID = flame ionization detection FPD = flame photometric detection GC = gas chromatography IGEFET = interdigitated gate electrode field-effect transistor ITMS = ion trap mass spectrometry MIMS = multiphoton ionization mass spectrometry MS = mass spectrometry... 

Brothers CP. 1990. Evaluation of an interdigitated gate electrode field-effect transistor for detecting organophosphorus compounds. Wright-Patterson AFB, OH Air Force Institute of Technology. NTISNo. AD-A23 0-161. 

Kolesar ES, Wiseman JM. 1989. Interdigitated gate electrode field effect transistor for the selective detection of nitrogen dioxide and diisopropyl methylphosphonate. Anal Chem 61(21) 2355. 

T. Sakata, S. Matsumoto, Y. Nakajima, and Y. Miyahara, Potential behaviour of biochemically modified gold electrode for extended-gate field-effect transistor. Jpn. J. Appl. Phys. 44, 2860-2863 (2005). 

Metal oxide semiconductor field-effect transistors (MOSFETs) are field effect transistors with a thin film of silicon dioxide between the gate electrode and the semiconductor. The charge on the silicon dioxide controls the size of the depletion zone in the polype semiconductor. MOSFETs are easier to mass produce and are used in integrated circuits and microprocessors for computers and in amplifiers for cassette players. Traditionally, transistors have been silicon based but a recent development is field-effect transistors based on organic materials. 

Ion-Selective Field Effect Transistors [22b,c,d] An ion-selective field effect transistor (ISFET) is a hybrid of an ion-selective electrode and a metal-oxide semiconductor field effect transistor (MOSFET), the metal gate of the MOSFET being replaced by or contacted with a thin film of a solid or liquid ion-sensitive material. The ISFET and a reference electrode are immersed in the solution containing ion i, to which the ISFET is sensitive, and electrically connected as in Fig. 5.37. A potential which varies with the activity of ion i, o(i), as in Eq. (5.38), is developed at the ion-sensitive film ... 

Fig. 9. A Schottky barrier gate used in the metal-semiconductor field-effect transistor (MESFET) in AT T gallium arsenide microchips. The tiny gate is only one micrometer wide (1/25,400 inch). The gate electrode is deposited before the ion-implantation process so that the gate material will shade the channel under it from the ion rain that doses the exposed material. (AT T Technology)...

Fig. 6.19 Evolution of ion-sensitive field-effect transistor (ISFET) from insulated gate FET and ion-selective electrode (ISE)...

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