FIELD EFFECT TRANSISTOR CHARACTERISTIC

Yang, S.Y, Shin, K., and Park, C.E., The effect of gate-dielectric surface energy on pentacene morphology and organic field-effect transistor characteristics, Adv Func. Mat, 15, 1806, 2005. 

However, a major problem with the pentacene precursor method is that a residual amount of the Diels-Alder adduct remains in the film and limits the carrier mobility of the final pentacene film [54]. To limit this problem, pentacene precursors with smaller or more easily eliminated Diels-Alder adducts have recently appeared, but the field-effect transistor characteristics of these new derivatives are yet to be published (Figure 5.3.9c) [55,56]. 

I. McCulloch, C. Bailey, M. Giles, M. Heeney, I. Love, M. Shkunov, D. Sparrowe and S. Tierney. Influence of molecular design on the field-effect transistor characteristics of terthiophene polymers. Chem. Mater. 17(6), 1381-1385 (2005). 

Letizia JA, Salata MR, Tribout CM, Facchetti A, Ratner MA, Marks TJ (2(X)8) N-channel polymers by design optimizing the interplay of solubilizing substituents, crystal packing, and field-effect transistor characteristics in polymeric bithiophene-imide semiconductors. J Am Chem Soc 130 9679-9694... 

Lee J-Y, Lin C-J, Lo C-T, Tsai J-C, Chen W-C (2013) Synthesis, morphology, and field-effect transistor characteristics of crystalline diblock copolymers consisted of poly (3-hexylthiophene) and syndiotactic polypropylene. Macromolecules 46 3005-3014... 

Lin J-C, Lee W-Y, Kuo C-C, Li C, Mezzenga R, Chen W-C (2012) Synthesis, morphology, and field-effect transistor characteristics of new crystalline-crystalline diblock copolymers of poly(3-hexylthiophene-block-steryl acrylate). J Polym Sci A Polym Chem 50 686-695... 

Horie M, Majewski LA, Feam MJ, Yu C-Y, Luo Y, Song A, Saunders BR, Turner ML (2010) Cyclopentadithiophene based polymers-a comparison of optical, electrochemical and organic field-effect transistor characteristics. J Mater Chem 20 4347-4355... 

Further indirect information on the transport mechanism can be obtained by spectroscopic investigations. Venuti et al., using Raman spectroscopy in conjunction with lattice dynamics calculation, found evidence of an efficient coupling between the lattice vibrations and low energy intramolecular modes [237]. Information of an even more indirect nature is provided by analyzing the field effect transistor characteristics which allow one to estimate the tail of the density of states of the semiconductor [238]. Interestingly, it is possible to compare quantitatively the tail of the density of states evaluated experimentally with the theoretical value obtained from MD/QC procedure [239]. 

Izawa, T, Miyazaki, E., Takimiya, K. Molecular ordering of high-performance soluble molecular semiconductors and re-evaluation of their field-effect transistor characteristics. Adv. Mater. 20(18), 3388-3392 (2008)... 

John A. Copeland and Stephen Knight, Applications Utilizing Bulk Negative Resistance F.A. Padovani, The Voltage-Current Characteristics of Metal-Semiconductor Contacts P.L. Hower, W.W. Hooper, B.R. Cairns, R.D. Fairman, and D.A. Tremere, The GaAs Field-Effect Transistor Marvin H. White, MOS Transistors... 

Yoshino, K. Takahashi, H. Muro, K. Ohmori, Y. Sugimoto, R. 1991. Optically controlled characteristics of Schottky gated poly(3-alkylthiophene) field effect transistor. J. Appl. Phys. 70 5035-5039. 

Field effect transistors (FETs), 19 155 22 144, 162-166. See also Transistors characteristics of, 22 164-166 in CMOS logic circuits, 22 251-253 compound semiconductors in, 22 160, 161-162... 

Figure 4.22 Schematic diagram of a field effect transistor. The silicon-silicon dioxide system exhibits good semiconductor characteristics for use in FETs. The free charge carrier concentration, and hence the conductivity, of silicon can be increased by doping with impurities such as boron. This results in p-type silicon, the p describing the presence of excess positive mobile charges present. Silicon can also be doped with other impurities to form n-type silicon with an excess of negative mobile charges.

Ryzhii V, Ryzhii M, Satou A et al (2008) Current-voltage characteristics of a graphene-nanoribbon field-effect transistor. J Appl Phys 103 094510... 

S.-S. Jan, J.-L. Chiang, Y.-C. Chen, J.-C. Chou, and C.-C Cheng, Characteristics of the Hydrogen Ion-Sensitive Field Effect Transistors with Sol-Gel-Derived Lead Titanate Gate, Anal. Chim. Acta 2002,469, 205. 

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