Field-effect transistor hole

Tanase C, Meijer EJ, Blom PWM, de Leeuw DM (2003) Unification of the hole transport in polymeric field-effect transistors and light-emitting diodes. Phys Rev Lett 91 216601... 

Cheng XY, Noh YY, Wang JP, Tello Frisch MJ, Blum RP, Vollmer A, Rabe JP, Koch N, Sirringhaus H (2009) Controlling electron and hole charge injection in ambipolar organic field-effect transistors by self-assembled monolayers. Adv Funct Mater 19 2407-2415... 

Fig. 38. Hall resistance Rnall of an insulated gate (ln.Mn)As field-effect transistor at 22.5 K as a function of the magnetic field for three different gate voltages. /tnaii s proportional to the magnetization of the (In.Mn)As channel. Upper right inset shows the temperature dependence of / Hall- Let inset shows schematically the gate voltage control of the hole concentration and the conesponding change of the magnetic phase (Ohno et al. 2000).

Fig. 2. Resistivity-vs.-temperature transition curves for some C j based superconductors. (A) Variation of the hole doping from 1.3 to 3.2 holes per C o molecule. Inset the field-effect transistor geometry used in the experiment. (B) Comparison of optimum hole-doped C ). as grown and intercalated with CHCI3 and CHBrj)...

Figure 15-28 Operation of a field effect transistor, (a) Nearly random distribution of holes and electrons in the base in the absence of gate potential. ( >) Positive gate potential attracts electrons that form a conductive channel beneath the gate. Current can flow through this channel between source and drain.

A polyacetylene field-effect transistor has been described622 but the response time is slow, apparently because the carrier mobility is low. An FET has been made from polythiophene but source-drain currents were less than 20 nA for drain voltages up to 50 V. The hole mobility was very low, calculated to be 2 x 10 5 cm2 V-1 s 1 623). 

Pentacene routinely yields field-effect transistor (FET) devices with reliable hole mobility of 1 cm2 V-1 s 1 [6], with mobility > 3 cm2 V-1 s-1 reported for thin-film devices on polymer gate dielectrics [9]. For transistors fabricated on single crystals of pentacene, the measured mobility approaches 60 cm2 V-1 s 1 [10]. 

Table 4.2. Highest hole mobilities from analyses of p-type organic field-effect transistors [23]...

Electron hole transport composites consisting of poly(aniline-co-2-acrylami-do-2-methyl-propanesulfonic acid), (V), and silicon nanoparticles were prepared by Hsu [4] and then used to prepare light-emitting diodes and electrodes for thin film field effect transistors. 

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