Field-Effect Transistors FETs

Electrically conducting polymers can be used as the active element in metal-insulator-semiconductor field-effect transistors (MISFET). MISFETs are generally produced by spin-coating a solution of a polymer onto the surface of oxidized silicon onto which metal electrodes have previously been deposited to form source and drain contacts (Fig. 21) [765]. 

The operation of a field-effect transistor is described in detail in the literature [477]. A field-effect transistor can use a vacuum-deposited thin layer film of PT prepared by the organometallic method [766]. A thin film field-effect transistor 

Thin film field-effect transistors are prepared by using LB films with thicknesses ranging from a monolayer to some ten monolayers as the active material (cf Sect. 3.7) [428]. Metal oxide semiconductor field-effect transistor (MOS-FET) devices work through the modulation of an accumulation layer at the 

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Selenium and selenium compounds are also used in electroless nickel-plating baths, delayed-action blasting caps, lithium batteries, xeroradiography, cyanine- and noncyanine-type dyes, thin-film field effect transistors (FET), thin-film lasers, and fire-resistant functional fluids in aeronautics (see... 

The invention of the germanium transistor in 1947 [I, 2] marked the birth of modem microelectronics, a revolution that has profoundly influenced our current way of life. This early device was actually a bipolar transistor, a structure that is mainly used nowadays in amplifiers. However, logical circuits, and particularly microprocessors, preferentially use field-effect transistors (FETs), the concept of which was first proposed by Lilicnficld in 1930 [3], but was not used as a practical application until 1960 [4]. In a FET, the current flowing between two electrodes is controlled by the voltage applied to a third electrode. This operating mode recalls that of the vacuum triode, which was the building block of earlier radio and TV sets, and of the first electronic computers. 

A Stable Class of Low-Band-Gap Materials 24 Organic Field Effect Transistors (FETs) 25 Synthesis 26 Aldol Route 27... 

Integrated circuits (IC s) are circuits in which bipolar transistors, field-effect transistors (FET), resistors, capacitors, and their required connections are combined on a single chip of semiconductor material which is usually made of single-crystal silicon. 

Although astronomy is accustomed to the detection of a few photons per pixel, the electric charge of a few electrons is extremely small. A critical part of the design of a focal plane array is the amplifier which converts the small amount of charge in each pixel into a signal that can be transmitted off the detector. The amplifier in an optical or infrared detectors is typically a field effect transistor (FET), a solid state structure which allows a very small amount... 

There are three major classes of palladium-based hydrogen sensors [4], The most popular class of palladium-based sensors is based on palladium resistors. A thin film of palladium deposited between two metal contacts shows a change in conductivity on exposure to hydrogen due to the phase transition in palladium. The palladium field-effect transistors (FETs) or capacitors constitute the second class, wherein the sensor architecture is in a transistor mode or capacitor configuration. The third class of palladium sensors includes optical sensors consisting of a layer of palladium coated on an optically active material that transforms the hydrogen concentration to an optical signal. 

Many active electronic devices can be operated at cryogenic temperatures [45], They are generally of the field-effect transistor (FET) type and are based on silicon (working down to 100K) or gallium arsenide (working even below 4K). 

Field-effect transistors (FETs) have dominated the semiconductor industry, largely displacing the earlier bipolar junction transistor (BJT) because of its negligible gate current and convenience in the design of integrated circuits. Figure 29 sketches how an FET works. 

Chemically modified waxes, 26 220 Chemically resistant fibers, 13 389 Chemically sensitive field-effect transistors (ChemFETs), 22 269. See also Field effect transistors (FETs)... 

See also Field effect transistors (FETs) Doped oxide semiconductor coatings, 23 17-19... 

Field effect transistors (FETs), 19 155 22 144, 162-166. See also Transistors characteristics of, 22 164-166 in CMOS logic circuits, 22 251-253 compound semiconductors in, 22 160, 161-162... 

ISFETs), 3 799 9 585 74 24. See also Field effect transistors (FETs) Ion-selective membranes, cavities in, 9 584 Ion size, cluster glass transition and, 74 469, 470... 

Judd-Hunter color difference scale, 7 321 Juglone, in skin coloring products, 7 847 Juglone derivatives, 21 264-265 Juice softening, 23 463 Junctional heart rhythm, 5 107 Junction capacitance, 22 244 Junction devices, 22 180-181 Junction FETs (JFETs), 22 163, 164. See also Field effect transistors (FETs) physics of, 22 241-245, 249 Junction potentials, 9 582 Junctions, stacking, 23 38-39. See also Josephson junctions p-n junction Just-in-Time technique, 21 172 Jute, 11 287, 288, 292, 293. See also China jute... 

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