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Organic field-effect transistor contact resistance

To operate an organic field effect transistor at low bias it is necessary to avoid large contact resistance within the source-drain circuit. ... [Pg.241]

Chwang, A. B., and Frisbie, C. D., Field effect transport measnrements on single grains of sexithiophene Role of the contacts, J. Phys. Chem. B, 104, 12202, 2000. Zaumseil, J., Baldwin, K. W., and Rogers, J. A., Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination, J. Appl. Phys., 93, 6117, 2003. [Pg.70]

See other pages where Organic field-effect transistor contact resistance is mentioned: [Pg.470]    [Pg.139]    [Pg.212]    [Pg.237]    [Pg.70]    [Pg.70]    [Pg.74]    [Pg.425]    [Pg.340]    [Pg.470]    [Pg.219]   
See also in sourсe #XX -- [ Pg.146 ]



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