Electrode field effect transistor

AFID = alkali-flame ionization detection FID = flame ionization detection FPD = flame photometric detection GC = gas chromatography IGEFET = interdigitated gate electrode field-effect transistor ITMS = ion trap mass spectrometry MIMS = multiphoton ionization mass spectrometry MS = mass spectrometry... 

Brothers CP. 1990. Evaluation of an interdigitated gate electrode field-effect transistor for detecting organophosphorus compounds. Wright-Patterson AFB, OH Air Force Institute of Technology. NTISNo. AD-A23 0-161. 

Kolesar ES, Wiseman JM. 1989. Interdigitated gate electrode field effect transistor for the selective detection of nitrogen dioxide and diisopropyl methylphosphonate. Anal Chem 61(21) 2355. 

Electrochemical Potential Ion-selective electrodes Gas selective electrodes Field effect transistors (ISFET, semiconductors)... 

Reference electrode field effect transistor REFET... 

Whole cells (animal, vegetable) Gas-sensing electrodes > Field-effect transistors J Potentiometry... 

Thus, the enzyme can be coupled to ammonia electrodes, field effect transistors or chemical methods of ammonia determination [115]. Alternatively, a bi-enz5mie system can be applied combining glutaminase with glutamate oxidase (Eq. (11.4)) ... 

Electron tunnelling tlirough monolayers of long-chain carboxylic acids is one aspect of interest since it was assumed tliat such films could be used as gate electrodes in field-effect transistors or even in devices depending on electron tunnelling [24, 26, 35, 36, 37 and 38]- It was found, however, tliat tlie whole subject depends critically on... 

Because of the very large resistance of the glass membrane in a conventional pH electrode, an input amplifier of high impedance (usually 10 —10 Q) is required to avoid errors in the pH (or mV) readings. Most pH meters have field-effect transistor amplifiers that typically exhibit bias currents of only a pico-ampere (10 ampere), which, for an electrode resistance of 100 MQ, results in an emf error of only 0.1 mV (0.002 pH unit). 

By 1988, a number of devices such as a MOSFET transistor had been developed by the use of poly(acetylene) (Burroughes et al. 1988), but further advances in the following decade led to field-effect transistors and, most notably, to the exploitation of electroluminescence in polymer devices, mentioned in Friend s 1994 survey but much more fully described in a later, particularly clear paper (Friend et al. 1999). The polymeric light-emitting diodes (LEDs) described here consist in essence of a polymer film between two electrodes, one of them transparent, with careful control of the interfaces between polymer and electrodes (which are coated with appropriate films). PPV is the polymer of choice. 

The invention of the germanium transistor in 1947 [I, 2] marked the birth of modem microelectronics, a revolution that has profoundly influenced our current way of life. This early device was actually a bipolar transistor, a structure that is mainly used nowadays in amplifiers. However, logical circuits, and particularly microprocessors, preferentially use field-effect transistors (FETs), the concept of which was first proposed by Lilicnficld in 1930 [3], but was not used as a practical application until 1960 [4]. In a FET, the current flowing between two electrodes is controlled by the voltage applied to a third electrode. This operating mode recalls that of the vacuum triode, which was the building block of earlier radio and TV sets, and of the first electronic computers. 

More recently. Gamier and coworkers used a printing technique to make OFETs on polymeric substrates [61]. Although printable field-effect transistors based on inorganic semiconductors have been reported as early as 1967 ]62], they did not come to any commercial development. We note, however, that in Gar-nier s device only the electrodes were actually printed. 

A novel development of the use of ion-selective electrodes is the incorporation of a very thin ion-selective membrane (C) into a modified metal oxide semiconductor field effect transistor (A) which is encased in a non-conducting shield (B) (Fig. 15.4). When the membrane is placed in contact with a test solution containing an appropriate ion, a potential is developed, and this potential affects the current flowing through the transistor between terminals Tt and T2. 

The ISFET is an electrochemical sensor based on a modification of the metal oxide semiconductor field effect transistor (MOSFET). The metal gate of the MOSFET is replaced by a reference electrode and the gate insulator is exposed to the analyte solution or is coated with an ion-selective membrane as illustrated in Fig. 

D.S. Kim, H.J. Park, H.M. Jung, J.K. Shin, Y.T. Jeong, P. Choi, J.H. Lee, and G. Lim, Field-effect transistor-based biomolecular sensor employing a Pt reference electrode for the detection of deoxyribonucleic acid sequence. Jpn, J. Appl. Phys. 43, 3855-3859 (2004). 

T. Sakata, S. Matsumoto, Y. Nakajima, and Y. Miyahara, Potential behaviour of biochemically modified gold electrode for extended-gate field-effect transistor. Jpn. J. Appl. Phys. 44, 2860-2863 (2005). 

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