Organic field-effect transistor fabrication

Parashkov, R. et al.. Flexible all-organic field effect transistors fabricated by electrode peehng transfer, Jpn. J. Appl. Phys. 43, L130-132, 2004. 

Z. Wang et al., Metal transfer printing and its application in organic field-effect transistor fabrication, Adv. Mater, 15, 1009, 2003. 

Dimitrakopoulos, C. D. Afzali-Ardakani, A. Furman, B. Kymissis, J. Purushothaman, S. 1997. Trans-trans-2,5-bis-[2- 5-(2,2 -bithienyl) ethenyl] thiophene Synthesis, characterization, thin film deposition and fabrication of organic field-effect transistors. Synth. Met. 89 193-197. 

Cui, T. Liang, G. Varahramyan, K. 2003. An organic poly(3,4-ethylenedioxythio-phene) field-effect transistor fabricated by spin coating and reactive ion etching. IEEE Trans. Electron Dev. 50 1419-1422. 

DCNDBQT organic field effect transistors (OFETs) were fabricated on a highly doped n-Si wafer with 30 nm silicon dioxide. Firstly, the silicon surface was rinsed with Dl-water, acetone and iso-propanol in order to remove small particles and organic impurities. Secondly, the substrate was treated with oxygen plasma and silanised for 26 hours at 60 °C by hexamethyldisilazane (HMDS) in order to improve the OFET performance [21]. As source-drain contacts of the bottom contact transistors (BOC) gold was used, which was evaporated through a shadow mask on the silieon dioxide (see Figure 5.2). 

Chemical Approaches to the Deposition of Metal Electrodes onto Self-Assembled Monolayers - A Step Towards the Fabrication of SAM-Based Organic Field-Effect Transistors... 

Many attempts were made to fabricate organic field effect transistors from rubrene thin films [1-4], The largest mobility obtained so far in rubrene OFETs is 2.5 cm2. 

Organic field effect transistors were fabricated based on C60 layers. The temperature dependence of juFE was investigated for different VG. pfe is found to be thermally activated with activation energies strongly dependent on the applied VG. Upon extrapolation of the data in the Arrhenius plot to infinite temperature in the Meyer-Neldel formalism, 7 r = 480 K and pm-i = 2.45 cm2V s 1 can be extracted. The observed temperature dependence of uEE can be explained by empirical MNR, which is based on the assumption of an exponential density of states distribution. 

Mushrush, M., Facchetti, A., Lefenfeld, M., Katz, H.E. and Marks, T.J., Easily processable phenylene-thiophene-based organic field-effect transistors and solution-fabricated nonvolatile transistor memory elements, J. Am. Chem. Soc., 125, 9414-9423, 2003. 

M., Sparrowe, D. and Tierney, S., Polymerizable liquid crystalline organic semiconductors and their fabrication in organic field effect transistors, J. Am. Chem. Soc., 13, 2436-2444, 2003. 

Organic Field Effect Transistors Theory, Fabrication and Characterization... 

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