Ion selective field effect transistors

The field effect transistors are well-known micro-sized electronic devices that are broadly used in electronic circuits. They are made of a small swab of the silicon substrate. The substrate is lightly p-doped. Two discrete spots placed in a certain distance from each other are strongly n-doped. One of these spots is called the source, while the other is called the drain. If voltage is applied between the source and the drain, then no current flows since the p-doped substrate acts like an insulator between the two n-doped spots. The area above the substrate between the drain and the source is prepared close to the surface but electrically insulated. It is called the Gate. 

The integration of chemically sensitive membranes with solid-state electronics has led to the evolution of miniaturized, mass-produced potentiometric probes known as ion-selective field effect transistors (ISFETs). The development of ISFETs is considered as a logical extension of coated-wire electrodes (described in Section 5.2.4). The construction of ISFETs is based on the tech- 

Protective coat, Metal contact. Si3N4 Si02insulator  

---

ISFET Ion-selective field effect transistor LIBS Laser-induced breakdown... 

Analytical and Biomedical Applications of Ion-Selective Field-Effect Transistors... 

The working principle of LAPS resembles that of an ion-selective field effect transistor (ISFET). In both cases the ion concentration affects the surface potential and therefore the properties of the depletion layer. Many of the technologies developed for ISFETs, such as forming of ion-selective layers on the insulator surface, have been applied to LAPS without significant modification. 

P. Bergveld and A. Sibbald, Analytical and Biomedical Applications of Ion-Selective Field-Effect Transistors. Elsevier, Amsterdam (1988). 

Enzyme-immobilized FETs (ENFETs), 22 269. See also Enzyme ion-selective field-effect transistor (ENFET) Field effect transistors (FETs)... 

ENZYME ION-SELECTIVE FIELD-EFFECT TRANSISTOR (ENFET)... 

See also ISS technique Ion-selective electrodes, 9 582—585 77 855-856 sensors using, 22 271 Ion-selective field-effect transistors... 

The ion-selective field-effect transistor (ISFET) represents a remarkable new construction principle [7, 63], Inverse potentiometry with ion-selective electrodes is the electrolysis at the interface between two immiscible electrolyte solutions (ITIES) [28, 55],... 

Ion-selective electrodes are systems containing a membrane consisting basically either of a layer of solid electrolyte or of an electrolyte solution whose solvent is immiscible with water. The membrane is in contact with an aqueous electrolyte solution on both sides (or sometimes only on one). The ion-selective electrode frequently contains an internal reference electrode, sometimes only a metallic contact, or, for an ion-selective field-effect transistor (ISFET), an insulating and a semiconducting layer. In order to understand what takes place at the boundary between the membrane and the other phases with which it is in contact, various types of electric potential or of potential difference formed in these membrane systems must first be defined. 

Fig. 4.8. Ion-selective field-effect transistor (ISFET). Vg denotes the gate voltage.

Sensors based on ion-selective field-effect transistors... 

Ion-Selective Field Effect Transistors [22b,c,d] An ion-selective field effect transistor (ISFET) is a hybrid of an ion-selective electrode and a metal-oxide semiconductor field effect transistor (MOSFET), the metal gate of the MOSFET being replaced by or contacted with a thin film of a solid or liquid ion-sensitive material. The ISFET and a reference electrode are immersed in the solution containing ion i, to which the ISFET is sensitive, and electrically connected as in Fig. 5.37. A potential which varies with the activity of ion i, o(i), as in Eq. (5.38), is developed at the ion-sensitive film ... 

Fig. 5.37 An ion-selective field-effect transistor (ISFET). 1, drain 2, source 3, substrate 4, insulator 5, metal lead 6, reference electrode 7, solution 8, membrane 9, encapsulant [22b].

Successful operation of potentiometric chemosensors opened up the possibility for the fabrication of chemical field-effect transistors (chemFETs) and ion-selective field-effect transistors (ISFETs). A sensing element in these devices, i.e. the MIP film loaded with the molecular, neutral or ionic, respectively, imprinted substance is used to modify surface of the transistor gate area. Apparently, any change in the potential of the film due to its interactions with the analyte alters the current flowing between the source and drain. 

This interface is also known as the perm-selective interface (Fig. 6.1a). It is found in ion-selective sensors, such as ion-selective electrodes and ion-selective field-effect transistors. It is the site of the Nernst potential, which we now derive from the thermodynamic point of view. Because the zero-current axis in Fig. 5.1 represents the electrochemical cell at equilibrium, the partitioning of charged species between the two phases is described by the Gibbs equation (A.20), from which it follows that the electrochemical potential of the species i in the sample phase (S) and in the electrode phase (m) must be equal. 

---