Tunneling, electron

E. L. Wolf, ed.. Principles of Electron Tunneling Spectroscopy, Oxford, New York, 1985. 

Electron tunnelling tlirough monolayers of long-chain carboxylic acids is one aspect of interest since it was assumed tliat such films could be used as gate electrodes in field-effect transistors or even in devices depending on electron tunnelling [24, 26, 35, 36, 37 and 38]- It was found, however, tliat tlie whole subject depends critically on... 

Polymeropoulos E E 1977 Electron tunneling through fatty-acid monolayers J. Appl. Phys. 48 2404-7... 

Glapis K P and Hwang G S 1998 Pattern dependent charging and the role of electron tunneling Japan. J. Appl. Phys. 37 2281... 

Beratan D N and Hopfield J J 1984 Calculation of electron tunneling matrix elements in rigid systems mixed valence dithiaspirocyclobutane molecules J. Am. Chem. Soc. 106 1584-94... 

Electron tubes Electron tunneling Electrooptic materials Electrooptics Electroosmosis... 

One important sem source that is not based on thermionic emission is the field emission (fe) source. Fe-sem systems typically give images of much higher resolution than conventional sems due to the much narrower energy distribution (on the order of 0.25 eV) of the primary electron beam. A fe source is a pointed W tip from which electrons tunnel under the influence of a large electric field. This different mechanism of electron generation also results in a brightness comparable to a conventional thermionic source with much less current. 

A Kuki, PG Wolynes. Electron tunneling paths in proteins. Science 236 1647-1652, 1987. T Ziegler. Approximate density functional theory as a practical tool m molecular energetics and dynamics. Chem Rev 91 651-667, 1991. 

Electrons can penetrate the potential barrier between a sample and a probe tip, producing an electron tunneling current that varies exponentially with the distance. 

Electron-tunneling Model. Several models based on quantum mechanics have been introduced. One describes how an electron of the conducting band tunnels to the leaving atom, or vice versa. The probability of tunneling depends on the ionization potential of the sputtered element, the velocity of the atom (time available for the tunneling process) and on the work function of the metal (adiabatic surface ionization, Schroeer model [3.46]). 

Another technique that has proved useful in establishing chemical bonding of coupling agents at interfaces is inelastic electron tunneling spectroscopy (ITES). For example. Van Velzen [16] examined 3-(trimethoxysilyl)propanethiol by this technique. Approximately monolayer quantities of this silane were adsorbed on the barrier oxide of an aluminum-aluminum oxide-metal tunneling junction two metals were investigated, lead and silver. It was concluded that the silane is... 

The Creutz-Taube anion, [(NH3)5Ru- N(CH=CH)2N Ru(NH3)5] + displays more obvious redox properties, yielding both 4+ and 6- - species, and much interest has focused on the extent to which the pyrazine bridge facilitates electron transfer. A variety of spectroscopic studies supports the view that low-energy electron tunnelling across the bridge delocalizes the charge, making the 5- - ion symmetrical. Other complexes, such as the anion [(CN)5Ru (/z-CN)Ru (CN)5] , are asymmetric... 

Electron tunnelling through the stable oxide film to the adsorbed oxygen which sets up a potential and causes ion drift, thus resulting in logarithmic oxide growth. 

Whereas a film formed in dry air consists essentially of an anhydrous oxide and may reach a thickness of 3 nm, in the presence of water (ranging from condensed films deposited from humid atmospheres to bulk aqueous phases) further thickening occurs as partial hydration increases the electron tunnelling conductivity. Other components in contaminated atmospheres may become incorporated (e.g. HjS, SO2, CO2, Cl ), as described in Sections 2.2 and3.1. 

Electronic conductivity arises from delocalized electrons, tunneling or hopping processes. 

This difference is the irreversible capacity loss (<2jr). Dahn and co-workers [71] were the first to correlate <21R with the capacity required for the formation of the SE1. They found that <2ir is proportional to the specific surface area of the carbon electrode and, assuming the fonnation of an Li2C03 film, calculated an SEI thickness of 45 5 A on the carbon particles, consistent with the barrier thickness needed to prevent electron tunneling [1,2]. They concluded [71] that when all the available surface area is coated with a film of the decomposition products, further decomposition ceases. 

These results could be explained as an increase in the dipole-dipole interactions along the z-axis, which could favor the electron tunneling from the tip to the substrate via several layers of particles arranged in a FCC structure. Furthermore, the Fermi level of nanocrystals subjected to a given bias is perturbed. 

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