Field-Effect Transistor-Based Aptasensors

Field-effect transistors exist in two major types the junction FET (JFET) and the metal-oxide-semiconductor FET (MOSFET). The junction FET has a 

FETs are actually the basic building blocks of integrated circuits. To develop circuits using nanotubes, we first have to design nanotube-based transistors. Silicon nanowires represent one of the best characterized examples of semiconductor nanotubes with the structure, size, and electronic properties controlled reproducibly (Hu et al., 1999 Cui et al., 2001a). In particular, silicon nanowires can be prepared as single-crystal structures with controllable diameters as small as 2 to 3 nm (Cui et al., 2003 Wu, 2004). Both n- and p-type FET devices can be produced with well-defined and reproducible high-performance properties 

Aptamer-modified carbon nanotube fieid-effect transistor 

For the development of FET-based biosensors, aptamers display a significantly better performance than their monoclonal antibody counterparts do under 

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