Metal insulator semiconductor field effect transistor technolog

Gallium arsenide s native oxide is found to be a mixture of nonstoichiometric galhum and arsenic oxides and elemental arsenic. Thus, the electronic band structure is found to be severely disrupted, causing a breakdown in normal semiconductor behavior on the GaAs surface. As a consequence, the GaAs MISFET (metal insulator semiconductor field-effect transistor) equivalent to the technologically important Si-based MOSFET (metal-oxide semiconductor field-effect transistor) is, therefore, presently unavailable. 

The process of GaAs oxidation is so complex that even after many years of work there are important issues that are still a matter of controversy. Consequently, the GaAs metal insulator semiconductor field effect transistor (MISEET) technology did not develop very weU since the electronic passivation of GaAs is not fully resolved. The challenges in the fabrication of high quality oxide layers on GaAs stimulate researchers to find out the most suitable techniques and conditions to solve the interface-related problems. 

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