Bipolar field-effect transistor

FigurelS.lO (a) Molecular structures of the n- (b) Schematics of bipolar field-effect transistors channel (BBL) and p-channel polymer based on n/p polymer heterojunctions, (c)...

PTCDI-Ci3H27 and (b) device structure of bipolar field-effect transistor consisting of a coevaporated thin film of 5T and PTCDI-Ci3H27. (c) Electron (filled circles) and hole (filled squares) field-effect mobilities for different bulk-... 

The invention of the germanium transistor in 1947 [I, 2] marked the birth of modem microelectronics, a revolution that has profoundly influenced our current way of life. This early device was actually a bipolar transistor, a structure that is mainly used nowadays in amplifiers. However, logical circuits, and particularly microprocessors, preferentially use field-effect transistors (FETs), the concept of which was first proposed by Lilicnficld in 1930 [3], but was not used as a practical application until 1960 [4]. In a FET, the current flowing between two electrodes is controlled by the voltage applied to a third electrode. This operating mode recalls that of the vacuum triode, which was the building block of earlier radio and TV sets, and of the first electronic computers. 

Integrated circuits (IC s) are circuits in which bipolar transistors, field-effect transistors (FET), resistors, capacitors, and their required connections are combined on a single chip of semiconductor material which is usually made of single-crystal silicon. 

Field-effect transistors (FETs) have dominated the semiconductor industry, largely displacing the earlier bipolar junction transistor (BJT) because of its negligible gate current and convenience in the design of integrated circuits. Figure 29 sketches how an FET works. 

Field-effect transistors (FETs) Heterojunction bipolar transistors (HBTs) High electron mobility transistors (HEMTs) Metal oxide semiconductor FETs (MOSFETs) Single-electron transistors (SETs) Single-heterojunction HBTs (SH-HBTs) Thin-film transistors (TFTs) hydrogenated amorphous silicon in, 22 135... 

At present, modern power components such as GTO (Gated Transistor On/Off device), IGBT (Isolated Gate Bipolar Transistor), Power Mosfet (Metal Oxide Field Effect Transistor), and high voltage capacitors are easily commercially available and perfectly adequate to realize the energy storage... 

MOSFETs. The metal-oxide-semiconductor field effect transistor (MOSFET or MOS transistor) (8) is the most important device for very-large-scale integrated circuits, and it is used extensively in memories and microprocessors. MOSFETs consume little power and can be scaled down readily. The process technology for MOSFETs is typically less complex than that for bipolar devices. Figure 12 shows a three-dimensional view of an n-channel MOS (NMOS) transistor and a schematic cross section. The device can be viewed as two p-n junctions separated by a MOS capacitor that consists of a p-type semiconductor with an oxide film and a metal film on top of the oxide. 

Both bipolar junction transistors (BJTs) and field-effect transistors (FETs) are charge-control devices [15]. The functions of the emitter, base, and collector electrodes of the BJT are replaced by the source, drain, and gate... 

Central to electronics is the IV measurement—that is, the measurement of the electrical current I through a device, as a function of the electrical potential, or bias, or voltage V placed across it. Electrical devices are most often "passive" two-terminal devices (resistors, capacitors, inductors, rectifiers and diodes, NDR devices), or "active" three-terminal devices (triodes, bipolar junction transistors, or field-effect transistors (FET)). 

Figure 1 shows the symbols of common elements used in electronic circuits. These can be classed as either passive components, such as resistors, capacitors, inductors, and diodes, or active components, such as bipolar and field-effect transistors, and silicon-controlled rectifiers (SCRs). Some of the key features and physical characteristics of these devices are summarized in the first two sections of this chapter. 

Bipolar and field effect transistors are the two standard crystalline semiconductor structures. Bipolar transistors require min-... 

In Figure 5-la is shown a schematic representation of a silicon MOSFET (metal-oxide-semiconductor field effect transistor). The MOSFET is the basic component of silicon-CMOS (complimentary metal-oxide-semiconductor) circuits which, in turn, form the basis for logic circuits, such as those used in the CPU (central processing unit) of a modern personal computer [5]. It can be seen that the MOSFET is isolated from adjacent devices by a reverse-biased junction (p -channel stop) and a thick oxide layer. The gate, source and drain contact are electrically isolated from each other by a thin insulating oxide. A similar scheme is used for the isolation of the collector from both the base and the emitter in bipolar transistor devices [6],... 

In terms of structure as bipolar junction transistor (BIT), metal-oxide semiconductor field-effect transistor (MOSFET), etc. 

---