Metal oxide silicon field-effect transistors MOSFET

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...

Metal oxide silicon field effect transistor (MOSFET) Surface acoustic wave Optical sensors... 

Currently, three basic high-frequency power amplifiers are in use the parallel connection of a bank of bipolar power transistors, the hybrid connection of parallel bipolar power transistors cascaded with metal oxide silicon field effect transistors (MOSFETs), and the bridge connection of MOSFETs. Each has unique properties and represents a stage in the evolution of ESUs. 

The metal oxide silicon field effect transistor (MOSFET) has the basic structure as shown schematically in Figure 10.1 (an n-channel device is shown and will be discussed, although p-channel devices work equally well). The device consists of two n-type diffusions (called the source and the drain) in a p-type substrate separated by a p-type area. This area is covered by a thin (50 nm) insulator layer (generally silicon dioxide or silicon dioxide overlaid with silicon nitride) which is called the gate insulator. On top of the gate insulator there is a metallic contact called the gate electrode, which in conventional devices is made from aluminium. The source and drain diffusions are... 

Metal oxide semiconductor field-effect transistors (MOSFETs) are field effect transistors with a thin film of silicon dioxide between the gate electrode and the semiconductor. The charge on the silicon dioxide controls the size of the depletion zone in the polype semiconductor. MOSFETs are easier to mass produce and are used in integrated circuits and microprocessors for computers and in amplifiers for cassette players. Traditionally, transistors have been silicon based but a recent development is field-effect transistors based on organic materials. 

Nevertheless, the first functional working TFT was demonstrated by Weimer in 1962 (Ref 2). He used thin films of polycrystalline cadmium sulfide, similar to those ones developed for photodetectors. The simplified structure is shown in Fig. 1(b). Other TFT semiconductor materials like CdSe, Te, InSb and Ge were investigated, but in the mid-1960 s the emergence of the metal oxide semiconductor field effect transistor (MOSFET) based on the crystalline silicon technology and the possibility to perform integrated circuits, led to a decline in TFT development activity by the end of the 1960s. 

There is much interest in the application of PVDF in medical imaging because of its close acoustic impedance match with both tissues. Monolithic silicon-PVDF devices have been produced in which a sheet of PVDF is bonded to a silicon wafer containing an array of metal oxide semiconductor field effect transistor (MOSFET) amplifiers arranged in such a way that when an acoustic wave is detected, the electrical signal resulting from the piezoelectric action in the PVDF appears directly on the gate of an MOS transistor. The device is therefore known as a piezoelectric oxide semiconductor field effect transistor (POSFET). 

MOSFET metal-oxide silicon field effect transistor... 

The metal-oxide-semiconductor field-effect transistor (MOSFET) is a transistor that uses a control electrode, the gate, to capacitively modulate the conductance of a surface channel joining two end contacts, the source and the drain. The gate is separated from the semiconductor body underlying the gate by a thin gate insulator, usually silicon dioxide. The surface channel is formed at the interface between the semiconductor body and the gate insulator, see Fig. 7.25. 

For driving matrix liquid crystal display panels, the silicon metal-oxide semiconductor field effect transistor (MOSFET) fabricated on a silicon monolithic wafer has been investigated by several groups [134-150]. The MOS transistor circuit fabrication techniques are well developed and have been used to produce various LSI devices. A dynamic scattering mode, a planar type GH mode or a polymer dispersed (PD) mode are used in these displays because the silicon wafer is intrinsically opaque. The circuit configuration of the panel is essentially the same as that of the p-Si TFT switch matrix addressed liquid crystal display panel as shown its equivalent circuit in Fig. 18(a). 

Metal-oxide semiconductor field-effect transistors (MOSFETs) fabricated on silicon-on-insulator (SOI) wafers operate faster and at a lower power than those fabricated on bulk sihcon wafers. Scaling down, which improves their performance, requires thinner SOI wafers. Although ultrathin (less than 50 nm) SOI wafers are already available, they do not yet have sufficient thickness uniformity. Thus, we undertook to form ultrathin and uniform-thickness SOI wafers by NC-PCVM. 

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