Metal oxide field effect transistor

At present, modern power components such as GTO (Gated Transistor On/Off device), IGBT (Isolated Gate Bipolar Transistor), Power Mosfet (Metal Oxide Field Effect Transistor), and high voltage capacitors are easily commercially available and perfectly adequate to realize the energy storage... 

The field effect transistor, or the metal oxide field effect transistor (MOSFET),... 

MOSFET Metal-Oxide-Field Effect Transistor... 

There are two basic types of solid-state chemical sensor (i) potentiometric devices, and (ii) field effect devices, e.g. ion-selective field effect transistors (ISFETs or CHEMFETs). Electrodes of the potentiometric type usually have a metal as the back contact and they also have a high output impedance. Field-effect devices are a variant of the metal oxide field-effect transistor (MOSFET) familiar in electronics, and they have a low output impedance. Hybrid devices attempt to combine the advantages of both. 

The technology developed for the semiconductor electronic industry was applied to the manufacture of miniature ion-selective sensors. In the early 1970s, Bergveld was the first to notice that metal oxide field effect transistors (MOSFET) could be sensitized with ion-selective materials (the device was named ISFET) to measure the activity of different ionic species. This was a forerunner of the... 

FIGURE 8.5 Schematic diagram and current-voltage (I-V) characteristics of (a) metal-semiconductor field-effect transistor (MESFET) and (b) metal-oxide semiconductor field-effect transistor (MOSFET). 

Different types of SiC Field Effect Transistors, Metal Oxide Semiconductor Transistors (MOSFETs), Metal Semiconductor Field Effect Transistors (MESFETs), and Junction Field Effect Transistors (JFETs) compete for future applications in high temperature and harsh environment electronics. This Datareview details these various types of FETs, the structures used and the performances obtained. Interesting recent developments and potential applications, such as FET integrated circuits, a hybrid operational amplifier and an inverter circuit are also outlined. 

MBE MEIS MESFET MINDO MIS MOCVD MOMBE MOS MOSFET MOVPE molecular beam epitaxy medium energy ion scattering metal semiconductor field effect transistor modified intermediate neglect of differential overlap metal-insulator-semiconductor metal-organic chemical vapour deposition metal-organic molecular beam epitaxy metal-oxide-semiconductor metal-oxide-semiconductor field effect transistor metal-organic vapour phase epitaxy... 

Kao, C.., Kwon, Yong Wook, Heo, Y.W., Norton, D.P., Pearton, S.., Ren, F. and Chi, G.C. (2005) Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition. Journal of Vacuum Science SI Technology B, 23, 1024. 

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...

Metal oxide semiconductor field-effect transistor pOSFEQ... 

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. 

A novel development of the use of ion-selective electrodes is the incorporation of a very thin ion-selective membrane (C) into a modified metal oxide semiconductor field effect transistor (A) which is encased in a non-conducting shield (B) (Fig. 15.4). When the membrane is placed in contact with a test solution containing an appropriate ion, a potential is developed, and this potential affects the current flowing through the transistor between terminals Tt and T2. 

Nanocrystals are receiving significant attention for nano-electronics application for the development of future nonvolatile, high density and low power memory devices [1-3]. In nanocrystal complementary metal oxide semiconductor (CMOS) memories, an isolated semiconductor island of nanometer size is coupled to the channel of a MOS field effect transistor (MOSFET) so that the charge trapped in the island modulates the threshold voltage of the transistor (Fig. 1). 

The operation principle of these TFTs is identical to that of the metal-oxide-semiconductor field-effect transistor (MOSFET) [617,618]. When a positive voltage Vg Is applied to the gate, electrons are accumulated in the a-Si H. At small voltages these electrons will be localized in the deep states of the a-Si H. The conduction and valence bands at the SiN.v-a-Si H interface bend down, and the Fermi level shifts upward. Above a certain threshold voltage Vth a constant proportion of the electrons will be mobile, and the conductivity is increased linearly with Vg - Vih. As a result the transistor switches on. and a current flows from source to drain. The source-drain current /so can be expressed as [619]... 

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